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Method for cutting silicon rod

A cutting method and silicon rod technology, which are applied in stone processing tools, manufacturing tools, stone processing equipment, etc., can solve the problems of silicon wafer TTV and warpage, and achieve the effect of simple method, easy operation and good application prospect.

Inactive Publication Date: 2010-06-16
CSI SOLAR POWER GROUP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a cutting method for silicon rods to solve defects such as TTV and warping of silicon wafers obtained by cutting.

Method used

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  • Method for cutting silicon rod
  • Method for cutting silicon rod
  • Method for cutting silicon rod

Examples

Experimental program
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Effect test

Embodiment 1

[0019] See attached image 3 As shown, a cutting method of a silicon rod includes wire cutting by using a metal wire and matching abrasives, and setting the silicon rod obliquely so that the side of the cutting surface located downstream of the wire travel direction is in contact with the wire first, The angle between the feed face and the wire is 3 degrees.

[0020] In the above, other operation methods are the same as the existing multi-wire cutting method, and the improvement of the present invention is only that the cutting surface of the silicon rod and the metal wire are deliberately formed at a relatively large angle, so as to avoid the The impact of the angle difference between the cutting surface and the metal wire; let one side of the silicon rod participate in the cutting first. Facts have proved that this cutting method will not produce any adverse effects, and can completely solve the defects of silicon wafer TTV and warpage. , getting qualified silicon wafers wi...

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Abstract

The invention discloses a method for cutting a silicon rod, which comprises the steps of: performing wire-electrode cutting by utilizing a metal wire and a matched grinding material; and arranging the silicon rod slantwise, so that one side, positioned at the downstream of an advance direction of the metal wire, of a cutting feed surface of the silicon rod comes into contact with the metal wire firstly, wherein an included angle between the cutting feed surface and the metal wire is 1 to 5 degrees. The cutting mode of the method can thoroughly solve problems of TTV, warping and the like of silicon wafers and achieves an unforeseeable effect.

Description

technical field [0001] The invention relates to the technical field of semiconductor material processing, in particular to a method for cutting silicon rods to obtain qualified silicon wafers. Background technique [0002] At present, in the solar photovoltaic industry, the grown silicon rods are usually cut to obtain silicon wafers with a predetermined thickness, and then the silicon wafers are ground, degummed, and cleaned to obtain finished silicon wafers and enter the next process. Among them, there are two main cutting methods for silicon rods, one is the inner circle cutting method, that is, using a circular sheet-shaped inner diameter saw and abrasive for slicing, and the second is the multi-wire cutting method, that is, through the high-speed reciprocating motion of the metal wire, The abrasive is brought into the silicon rod processing area for grinding, so that the silicon rod can be cut into thousands of thin silicon wafers at one time; due to the higher efficienc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D1/22
Inventor 刘帆
Owner CSI SOLAR POWER GROUP CO LTD
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