Polycrystalline silicon electric resistance and manufacturing method thereof

Abstract

The invention discloses a polycrystalline silicon electric resistance, comprising two layers of polycrystalline silicon which are arranged from top to bottom, an insulation layer is arranged between the two layers of polycrystalline silicon; the two layers of polycrystalline silicon are connected with a first layer of metal wire through contact holes. The insulation layer is silicon oxide or silicon nitride or the combination of silicon oxide and silicon nitride. In the invention, the two layers of polycrystalline silicon are adopted to change a plane polycrystalline silicon electric resistance into a two-layered up-and-down three-dimensional structure, a layer of insulation layer is used for segregating the two layers of polycrystalline silicon; in addition, the two layers of polycrystalline silicon are connected with the first layer of metal wire through the contact holes, so that 50% of chip-occupied area can be saved and the cost can be greatly reduced; moreover the structure enjoys more advantages when being applied to manufacture large polycrystalline silicon electric resistance. The invention also discloses a manufacturing method of the polycrystalline silicon electric resistance.

Description

technical field [0001] The invention relates to a semiconductor structure, in particular to a polysilicon resistor, and also relates to a manufacturing method of the polysilicon resistor. Background technique [0002] According to R=(p / t)(L / W)=R □ (L / W), if you want to make a large polysilicon resistor, you must design the polysilicon resistor as figure 1 In the long strip structure shown, there is a contact hole 1 on the polysilicon resistor. That is to say, the polysilicon should meet the design rules of layout. For polysilicon with a width of L, there must be a certain distance S between each two polysilicons. Therefore, the structure occupies a large area, which is not conducive to controlling the cost of chip design. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a polysilicon resistor, which can save the occupied area of ​​the chip and control the cost of chip design. [0004] For solving the problems o...

AI Technical Summary

Problems solved by technology

That is to say, polysilicon should meet the design rules of Layout. For polysilicon with a width of L, there must be a certain distance S between every two polysilicons. Therefore, the structure occupies a large area, which is not conducive to controlling the cost of chip design.

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