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Solar cell having nanodiamond quantum wells and its making method

A solar cell, nanodiamond technology, applied in nanotechnology, nanotechnology, nano-optics, etc., can solve problems such as low conversion efficiency limitation

Inactive Publication Date: 2010-06-23
宋健民
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Despite dramatic improvements in materials and manufacturing methods for solar cells, their conversion efficiency limit is still well below theoretical efficiency values, and the maximum efficiency of existing solar cells is around 26%.

Method used

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  • Solar cell having nanodiamond quantum wells and its making method
  • Solar cell having nanodiamond quantum wells and its making method
  • Solar cell having nanodiamond quantum wells and its making method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] A semiconductor device is manufactured through the following steps:

[0069] Nanodiamonds are formed by detonating explosives (TNT+RDX) in a container with insufficient oxygen, wherein the nanodiamond particles have a size of 4-10 nanometers. Nano-diamonds are scattered on an organic binder (OrganicBinder) and dried to form a layered structure. The nano-diamond layer is used as a target material to perform magnetron sputtering of argon ions on the target material.

[0070] Next, using a P-type silicon wafer as a substrate, the sputtered diamond bombards the substrate to form atomic clusters. The coated P-type silicon wafer is further coated with N-type silicon to form a PIN connection structure as a solar cell.

Embodiment 2

[0072] The semiconductor device as described in Example 1, however, the P-type semiconductor is copper indium gallium selenide (CIGS), and the N-type semiconductor is cadmium sulfide.

Embodiment 3

[0074] The semiconductor device as described in Example 1, however, the P-type semiconductor is boron-doped amorphous diamond, and the N-type semiconductor is nitrogen-doped amorphous diamond.

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Abstract

A solar cell having nanodiamond quantum wells and its making method. The present invention provides materials, devices, and methods for generation of electricity from solar power. In one aspect, the present invention includes a solar cell, including a first conductor, a doped silicon layer in electrical communication with the first conductor, a nanodiamond layer in contact with the doped silicon layer, a doped amorphous diamond layer in contact with the nanodiamond layer, and a second conductor in electrical communication with the doped amorphous diamond layer.

Description

technical field [0001] This application claims the benefit of U.S. Provisional Patent Application No. 61 / 122,239, filed December 12, 2008, and U.S. Provisional Patent Application No. 61 / 138,429, filed December 17, 2008, both of which are Both applications are incorporated herein by reference. [0002] The present invention relates to a device for generating electricity and its manufacturing method, especially to a solar cell with nano-diamond quantum wells and its manufacturing method. The device and method particularly include the use of nano-diamond material. Accordingly, the present invention relates to physics, chemistry, electronics, and materials science. Background technique [0003] Solar cell technology has been developed for decades, thus making a significant contribution to the possible electricity in a variety of different applications. Despite dramatic improvements in materials and fabrication methods for solar cells, their conversion efficiency limit is still...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/042H01L31/028H01L31/20
CPCH01L31/076H01L21/02592H01L31/0392H01L21/02513H01L31/03682Y02E10/548H01L31/03762H01L21/02381H01L21/02444H01L31/035245H01L31/202H01L31/03921Y02E10/50H01L31/0747H01L31/032B82Y20/00H01L21/02527Y02E10/547Y02P70/50
Inventor 宋健民
Owner 宋健民