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Control method for plasma etching

A plasma and control method technology, applied in the field of plasma etching control, can solve the problems of multi-PR layer, etching stop, affecting the outer contour of the through hole, etc., and achieve the effect of large etching speed

Inactive Publication Date: 2010-06-30
SEMICON MFG INT (SHANGHAI) CORP
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  • Application Information

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Problems solved by technology

However, when the manufacturing process reaches 65nm or even more precise, more PR layers will be lost in this process
For example, in the through-hole etching process of high-precision manufacturing technology, the PR layer is generally very thin. If a higher deflection power is used at this time, it will cause greater damage to the PR layer and give the through-hole formed by etching. Internal interference fringe (Striation), thus affecting the outer profile of the formed via; and if a lower deflection power is used, a lower etching rate or even an etching stop may occur

Method used

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  • Control method for plasma etching
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Embodiment Construction

[0020] In order to make the object, technical solution and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0021] In the present invention, the etching method used is a plasma etching method, so in the plasma etching process, the oxygen flow rate will be gradually reduced and the deflection power acting on the plasma will be gradually increased to perform etching, that is, in the plasma In the etching process, the deflection power acting on the plasma will gradually increase from the initial value to the final value, while the flow rate of oxygen used will gradually decrease from the initial value to the final value, so as to achieve high etching speed while maintaining More PR layer purposes.

[0022] figure 2 It is a schematic flow chart of the plasma etching control method in the present invention. Such as figure 2 As shown, the co...

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Abstract

The invention discloses a control method for plasma etching. The method comprises gradually increasing deflection power acted on the plasma and gradually reducing used oxide flow rate in the etching process of the plasma. By using the method, higher etching speed can be kept and a PR layer can be protected at the same time, the etched PR layer still keeps a larger thickness, meanwhile, a barrier layer can be prevented from being carved when carrying out etching. In addition, by using the method, through holes formed after etching have vertical external profile, and each through hole has better uniformity, thereby enhancing the performance of semiconductor components formed after etching.

Description

technical field [0001] The invention relates to the manufacturing technology of semiconductor elements, in particular to a control method of plasma etching. Background technique [0002] In the integrated circuit (IC) manufacturing process, with the continuous increase of the integration of integrated circuits, the area of ​​semiconductor components is gradually reduced, and the design line width of integrated circuits is also getting smaller and smaller, so it is possible to form extremely fine dimensions on semiconductor components. circuit structure. In the prior art, the photoresist pattern produced after Micro-lithography is generally transferred to the material under the photoresist (PR, PhotoResistor) layer by etching (Etching) technology, thereby forming the integrated circuit. complex architecture. [0003] In the back-end process (BEOL, Back-End-Of-Line) of semiconductor elements, it is usually necessary to etch via holes (Via) on the base material. figure 1 It ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00H01L21/311H01L21/768H01J37/32
Inventor 孙武
Owner SEMICON MFG INT (SHANGHAI) CORP