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Thermal interface material and preparation method thereof

A technology of thermal interface materials and phase change materials, which is applied in heat exchange materials, chemical instruments and methods, nanotechnology for materials and surface science, etc. The flatness of the material surface is reduced, and the heat dissipation efficiency is reduced, so as to increase the actual thermal contact area, reduce the cost, and improve the thermal conductivity.

Active Publication Date: 2010-07-07
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The thermal interface material prepared by the method adopted in the above patent application uses chemical mechanical polishing or mechanical grinding to remove excess polymer, so that the carbon nanotubes are exposed on the surface of the polymer, and its thermal conductivity is greatly improved, but Due to the chemical mechanical polishing or mechanical grinding process, the surface flatness of the thermal interface material will decrease, so that the contact thermal resistance between the thermal interface material and the heat source is relatively large, which reduces the heat dissipation efficiency
In addition, the use of chemical mechanical polishing or mechanical grinding process makes its production cost higher

Method used

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  • Thermal interface material and preparation method thereof
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  • Thermal interface material and preparation method thereof

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Embodiment Construction

[0016] The thermal interface material provided by the present invention and its preparation method will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0017] see figure 1 , the present invention provides a thermal interface material 10 , which includes a carbon nanotube array 2 , a matrix 4 , a plurality of heat-conducting particles 6 dispersed in the matrix 4 , and an organic substance 8 . Wherein, the matrix 4 is arranged at the end of the carbon nanotube array 2 , and the organic matter 8 is filled in the gaps between the carbon nanotubes in the carbon nanotube array 2 .

[0018] The ends of the carbon nanotube array 2 include a first end and a second end opposite to the first end. The height of the carbon nanotube array 2 can be determined according to the needs of practical applications. The carbon nanotube array 2 includes a plurality of carbon nanotubes, and the carbon nanotubes include one of single-wall c...

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Abstract

The invention discloses a thermal interface material, which comprises a carbon nano-tube array and a substrate arranged at least one end of the carbon nano-tube array, wherein the thermal interface material further comprises a plurality of heat-conducting particles which are distributed in the substrate; and the plurality of heat-conducting particles contact the carbon nano-tube array. The thermal interface material provided by the invention has the characteristics of low thermal contact resistance and high heat-conducting efficiency. The invention also provides a method for preparing the thermal interface material.

Description

technical field [0001] The invention relates to a thermal interface material and a preparation method thereof, in particular to a carbon nanotube thermal interface material and a preparation method thereof. Background technique [0002] In recent years, with the rapid development of the integration process of semiconductor devices, the degree of integration of semiconductor devices has become higher and higher, the volume of devices has become smaller and smaller, and the demand for heat dissipation has become higher and higher. High-efficiency heat dissipation has become an increasingly increasingly important issue. In order to meet the heat dissipation requirements, a thermal interface material with a high thermal conductivity is usually added between the radiator and the semiconductor device, which can make the contact between the radiator and the semiconductor device closer and enhance the heat conduction effect between the semiconductor device and the radiator . [00...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K5/14H01L23/373
CPCC01B31/0226C01B2202/08H05K7/20481B82Y40/00B82Y30/00H01L23/373H01L23/3737H01L23/4275H01L24/29H01L2224/29076H01L2224/29083H01L2224/2929H01L2224/293H01L2224/29393H01L2224/29499H01L2224/32245C01B32/16Y10T428/25Y10T428/256Y10T428/30
Inventor 姚湲范守善
Owner TSINGHUA UNIV
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