Method for increasing charging capacity of single crystal furnace

Abstract

The invention relates to a method for increasing the charging capacity of a single crystal furnace. The method includes the following steps: at the initial stage of adding silicon materials to the single crystal furnace, a furnace body upper cover of the single crystal furnace is opened, a clamping device is hooked by a lifting hook and is pulled upwards, a hook is pulled upwards by the clamping device, a flow guide cylinder is driven by the hook to ascend upwards, and the silicon materials are added again to a crucible; after the melting process of the silicon materials is finished, and the processing stage of downward moving of the flow guide cylinder is added at the clearance stage before the working procedure of crystal seeding; at the processing stage of the downward moving of the flow guide cylinder, the lifting hook moves downwards, the flow guide cylinder does not sink any longer after falling into the preset working position, but the clamping device continues to sink so as to cause the hook to separate from a pothook; after the clamping device separates from the hook, the lifting hook continues to pull the clamping device and move the clamping device to the outside of the single crystal furnace. The most obvious characteristic of the method in the invention is as follows: by adopting the simplest mode that the hook and the pothook work in a matching manner, the method can quickly finish the lifting of the flow guide cylinder, thereby greatly increasing the production efficiency.

Description

technical field [0001] The invention relates to a method for Czochralski silicon single crystal furnace, in particular to a method for increasing the feeding amount of the single crystal furnace. Background technique [0002] According to page 87 of "Solar Cell Materials" printed for the first time in the first edition of Beijing by Chemical Industry Press in January 2007 Figure 4 .10 Records in the Czochralski monocrystalline silicon production process diagram: The Czochralski monocrystalline silicon production process mainly includes eight major steps, which are the charging process, the melting process, the seed crystal process, the seeding process, the shouldering process, and the equal diameter process. , Finishing process, finishing process. [0003] The guide tube is inherent in the traditional Czochralski monocrystalline silicon equipment and the traditional Czochralski monocrystalline silicon process. [0004] The function of the guide tube is to guide the flow di...

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Problems solved by technology

Thereby greatly improving production efficiency

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