Circuit and method for driving resistive random access memory to realize multi-valued storage

Abstract

The invention discloses a circuit and a method for driving a resistive random access memory to realize multi-valued storage by using a capacitor. The circuit consists of a plurality of capacitors which are used for storing electric energy and have different capacitances, a plurality of voltage sources, the resistive random access memory, and a switching circuit, wherein the capacitors are connected to the voltage sources and the resistive random access memory through the switching circuit. The method comprises the following steps of: charging the capacitors having different capacitances to make the capacitors have the same voltage, or charging the capacitors having the same capacitance to make the capacitors have different voltages so as to make the capacitors store different electric energy; and then driving the resistive random access memory by using the capacitors having different electrical energy as signal excitation sources, and changing the resistance state of the resistive random access memory so as to make the resistive random access memory have different resistance states and realize the multi-valued storage. By using the circuit and the method, the multi-valued storage is realized by using a simple circuit to drive the resistive random access memory, and storage with a higher density in the same area is realized.

Description

technical field

[0001] The invention relates to the technical field of microelectronic devices and memory, in particular to a circuit and method for realizing multi-value storage by using capacitance-driven resistance transition memory. Background technique

[0002] The explosive growth of the consumer electronics market has led to the rapid growth of the non-volatile semiconductor memory (currently represented by flash memory), and it is expected that its total market value will soon exceed that of DRAM. However, conventional nonvolatile memory based on floating gate structures is encountering increasing difficulties in size reduction. This is mainly because the floating gate memory realizes the recording of information by storing or erasing charges in the polysilicon floating gate, thereby changing the threshold voltage of the MOS transistor. In order to store charges in the floating gate for more than 10 years, the thickness of the tunnel oxide layer cannot be excessivel...

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