Method for preparing ordered magnetic nanoparticle composite film with super-high density

A technology of magnetic nanoparticles and composite films, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of particle agglomeration, self-assembly of ordered arrays, destruction, insufficient magnetic coercivity at room temperature, etc.

Inactive Publication Date: 2010-07-28
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This annealing process generally leads directly to the agglomeration of particles and the destruction of self-assembled ordered arrays
Although some articles have reported that the self-assembly sequence of FePt particles can be maintained up to 530°C, the room temperature magnetic coercive force of the particles after annealing at 530°C is less than 1kOe, which cannot meet practical requirements.
The application of ALD deposition technology to the preparation of ultra-high-density ordered FePt / CoPt nano-lattice work is still blank

Method used

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  • Method for preparing ordered magnetic nanoparticle composite film with super-high density
  • Method for preparing ordered magnetic nanoparticle composite film with super-high density
  • Method for preparing ordered magnetic nanoparticle composite film with super-high density

Examples

Experimental program
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Effect test

Embodiment 1

[0025] 1) Preparation of superparamagnetic single-layer FePt nanoparticle lattice: the pre-prepared 4.5nm iron-platinum particles are dispersed in a mixed solution with a volume ratio of 1:2 in hexane: octane, and the mixed solution at this time contains FePt is 3 mg / mL. Firstly, a 1.0×1.0 cm2 Si wafer was cleaned by a standard RCA method, and then treated with HF (water at a volume ratio of 1:10) for 30 seconds to remove oxides on the surface of the silicon wafer. At room temperature, the self-assembled FePt ordered particle lattice was formed by the droplet method, and finally baked at 80° C. for 30 minutes.

[0026] 2) Growth of Al by atomic layer deposition technology 2 o 3 Protective film: Put the Si substrate with FePt particles dispersed on the surface into the ALD reaction chamber, and then deposit a layer of 10nm Al on its surface 2 o 3 thin film, superparamagnetic FePt / Al 2 o 3 Composite film. The set ALD deposition parameters are:

[0027] Reaction chamber t...

Embodiment 2

[0032] 1) Preparation of superparamagnetic single-layer FePt nanoparticle lattice: disperse the 4nm iron-platinum particles prepared in advance in a mixed solution with a volume ratio of 1:1.5 in hexane: octane, and the mixed solution containing FePt at this time is 5mg / mL. A 1.0 × 1.0 cm2 SiO 2 The slices were cleaned. The self-assembled FePt ordered particle lattice is formed by spin film spin coating method, and the silicon wafer needs to be kept at 80°C for 30 minutes to ensure that the solvent is completely volatilized.

[0033] 2) Growth of Al by atomic layer deposition technology 2 o 3 Protective film: Put the Si substrate with FePt particles dispersed on the surface into the ALD reaction chamber, and then deposit a layer of 20 nanometer Al on its surface 2 o 3 thin film, superparamagnetic FePt / Al 2 o 3 Composite film. The set ALD deposition parameters are:

[0034] Reaction chamber temperature: room temperature;

[0035] Reaction source: deposited Al 2 o 3 ...

Embodiment 3

[0039] 1) Preparation of superparamagnetic single-layer FePt nanoparticle lattice: 4nm iron-platinum particles prepared in advance are dispersed in a mixed solution with a volume ratio of 1:3 in hexane: octane, and the mixed solution containing FePt at this time is 3mg / mL. First, the surface of 1.0×0.5 cm2 MgO is purged clean, and then the MgO substrate is annealed at 700° C. for 30 minutes. Then spin-coating method is used to form a self-assembled FePt ordered particle lattice, and the silicon wafer needs to be kept at 70°C for 40 minutes to ensure that the solvent is completely volatilized.

[0040] 2) Growth of Al by atomic layer deposition technology 2 o 3 Protective film: Put the Si substrate with FePt particles dispersed on the surface into the ALD reaction chamber, and then deposit a layer of 30nm Al on its surface 2 o 3 thin film, superparamagnetic FePt / Al 2 o 3 Composite film. The set ALD deposition parameters are:

[0041] Reaction chamber temperature: 450°C;...

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Abstract

The invention discloses a method for preparing an ordered magnetic nanoparticle composite film with super-high density, which comprises the steps of: at first, preparing FePt/CoPt superparamagnetic nanoparticle; self-assembling a FePt/CoPt superparamagnetic nanoparticle-containing nonmagnetic substrate and using an atomic layer deposition technique to grow an inorganic nonmagnetic matrix film protective layer of 10-30 nanometers on the surface of the substrate containing a single layer of FePt/CoPt nanoparticle lattice; putting the deposited substrate in a tubular diffusion furnace for annealing for 30 to 90 minutes at high temperature from 600 to 750 DEG C in a reducing atmosphere of 90-97% of Ar and 10-3% of H2 to result in the composite film of FePt/CoPt ferromagnetic nanoparticles and oxides. The method can obtain the ordered FePt/CoPt nanoparticle composite film with L10 phase, good magnetic property and the magnetic coercive field up to Hc=5.9kOe.

Description

technical field [0001] The invention relates to a preparation method of an ultra-high-density ordered FePt / CoPt magnetic nanoparticle composite film based on atomic layer deposition technology, which uses an innovative process technology-the self-assembly of FePt / CoPt nanoparticle and atomic layer deposition technology. approach to prepare ordered FePt / CoPt magnetic nanoparticle composite films. The technology belongs to the field of ultra-high density magnetic recording storage. Background technique [0002] Since IBM Corporation used ferromagnetic materials for data storage and invented the first hard disk in 1956, ferromagnetic materials have been widely used and developed rapidly in the modern information industry. From 1956 to 1991, the storage density of hard drives increased at a rate of 23% per year. After 1991, the data density of hard drives increased at a high rate of 60% per year. However, with the rapid growth of hard disk storage density and the continuous r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/56
CPCC23C16/0281C23C16/45525
Inventor 李爱东孔继周龚佑品张俊龙吴迪
Owner NANJING UNIV
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