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Cleaning method of semiconductor component

A component and semiconductor technology, applied in the cleaning field of semiconductor components, can solve the problems of poor cleaning effect, low cleaning efficiency, complicated operation process, etc.

Active Publication Date: 2011-10-05
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the above process, the cleaning machine needs to be equipped with multiple cleaning tanks, and each wafer needs to be cleaned in multiple cleaning tanks, so the operation process is more complicated, the cleaning efficiency is not high, and the cleaning effect is not good.

Method used

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  • Cleaning method of semiconductor component
  • Cleaning method of semiconductor component
  • Cleaning method of semiconductor component

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Experimental program
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Embodiment Construction

[0023] In order to make the object, technical solution and advantages of the present invention more clearly, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0024] figure 2 It is a schematic flow chart of the cleaning method of semiconductor components in the present invention. Such as figure 2 As shown, the cleaning method of semiconductor components provided in the present invention comprises the steps as follows:

[0025] In step 201, the surface of the wafer is cleaned with a mixture of sulfuric acid and hydrogen peroxide.

[0026] In this step, sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 o 2 ) mixed solution (SPM) to clean the wafer surface to remove photoresist and organic contaminants. The proportioning of the SPM used is generally (2~6): 1; Preferably, the proportioning of the SPM used is 2: 1 (that is, the ratio of sulfuric acid and hydrogen peroxide in the mixe...

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Abstract

The invention discloses a cleaning method of a semiconductor component. The method comprises the following steps of: cleaning the surface of a wafer by using a mixed solution SPM of sulfuric acid and hydrogen peroxide; cleaning the surface of the wafer by using deionized water DI; and cleaning the surface of the wafer by using a mixed solution SCI of hydrogen peroxide and ammonia water. The method can obtain better cleaning effect and improve the surface cleanness of the wafer.

Description

technical field [0001] The invention relates to the manufacturing technology of semiconductor components, in particular to a cleaning method of semiconductor components. Background technique [0002] In the photolithography (AA Photo, Active Area Photo) process of the active area in the 65nm manufacturing technology of semiconductor components, a photoresist (PR, Photo Resist) layer is usually used for shallow trench isolation (STI, Shallow Trench Isolation) The trench is etched and SiN is used as a photolithographic mask. In the AA Photo process of 45nm manufacturing technology, a three-layer (Tri-layer) Si-containing bottom anti-reflective layer (BARC) is generally used as a mask for STI etching to ensure that the silicon nitride (SiN) layer will not be damaged. damage. figure 1 Schematic diagram for STI etching using a three-layer Si BARC, as figure 1 As shown, when performing STI etching, a bottom layer (Under layer), three layers of Si BARC, a PR layer, and a top lay...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/76H01L21/304C11D7/08C11D7/06B08B3/04
Inventor 刘焕新
Owner SEMICON MFG INT (SHANGHAI) CORP