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Integrated tandem-type thin film silicon solar cell module and method for manufacturing the same

A technology of solar cells and manufacturing methods, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve problems such as area loss of solar cell module power generation, increase of ineffective area, power generation performance, and power leakage, so as to reduce product costs and suppress Effect of increase in ineffective area and high-efficiency power generation performance

Inactive Publication Date: 2010-08-11
村田 正义
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] That is, although the prior art described in the above-mentioned Patent Document 1 and Patent Document 2 solves the so-called problem that part of the generated electric power leaks through the intermediate layer through the photoelectric conversion unit layer of the above-mentioned integrated tandem type thin-film silicon solar cell, However, there is a problem related to the power generation performance of the loss of the area used for power generation of the solar cell module, that is, the increase of the so-called ineffective area.

Method used

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  • Integrated tandem-type thin film silicon solar cell module and method for manufacturing the same
  • Integrated tandem-type thin film silicon solar cell module and method for manufacturing the same
  • Integrated tandem-type thin film silicon solar cell module and method for manufacturing the same

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Embodiment 1

[0073] First, referring to the integrated tandem type thin-film solar cell module according to the first embodiment of the present invention, figure 1 and Fig. 2(a) to (g) for description.

[0074] figure 1 This is a configuration diagram schematically showing a cross-section of an integrated tandem-type thin-film solar cell module according to the first embodiment of the present invention. Figure 2(a) ~ Figure 2(g) It is a drawing showing the manufacturing process of the integrated tandem type thin-film solar cell module according to the first embodiment of the present invention.

[0075] exist figure 1 And in FIGS. 2( a ) to ( g ), symbol 1 is an integrated tandem thin film solar cell module.

[0076] Reference numeral 12 is a tandem-type thin-film solar battery cell, which has a structure: the following transparent electrode layer 3 is sequentially stacked on the following transparent substrate 2, and the first thin-film photoelectric conversion unit 4 having the follow...

Embodiment 2

[0131] Then refer to image 3 4( a ) to ( g ), the integrated tandem thin film solar cell module according to the second embodiment of the present invention will be described.

[0132] image 3 This is a configuration diagram schematically showing a cross-section of an integrated tandem thin-film solar cell module according to a second embodiment of the present invention. Figure 4(a) ~ Figure 4(g) It is a figure showing the manufacturing process of the integrated tandem type thin-film solar cell module concerning 2nd Embodiment of this invention.

[0133] exist image 3 and Figure 4(a) ~ Figure 4(g) Among them, symbol 13 is the separation groove of the second intermediate layer, on the outside of the surface extending toward the normal direction of the upper surface of the transparent substrate 2 between the side 11a of the connection groove 11 and the side 8a of the first separation groove 8 (from the connection The direction away from the side surface 11a of the groove...

Embodiment 3

[0176] Then refer to Figure 5 An integrated tandem-type thin-film solar cell module according to a third embodiment of the present invention will be described.

[0177] Figure 5 This is a configuration diagram schematically showing a cross-section of an integrated tandem thin-film solar cell module according to a third embodiment of the present invention.

[0178] exist Figure 5 Among them, symbol 14 is the separation groove of the third intermediate layer, which has the following spatial structure: there is an opening on the interface between the intermediate layer 5 and the second thin-film photoelectric conversion unit 6, and the first intermediate layer 5 The interface with the first thin-film photoelectric conversion unit 4 has a bottom surface and is surrounded by surfaces extending along the normal direction of the upper surface of the transparent substrate 2 from the two side surfaces 8 a and 8 b of the first separation groove 8 . In addition, the side surface 11...

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Abstract

The invention provides an integrated tandem-type thin film silicon solar cell module and a method for manufacturing the same. The tandem-type thin film silicon solar cell module has a structure wherein an interlayer layer is arranged. The module suppresses a problem of a current leak through the intermediate layer and has high light conversion efficiency by suppressing expansion of an ineffective area not contributing to power generation. A method for manufacturing such module is also provided. The module has a structure wherein a separating groove is arranged between the intermediate layer and a connecting groove, the separating groove is embedded with a crystalline silicon film, and a separating member does not exist between the separating groove and the connecting groove.

Description

technical field [0001] The invention relates to the structure of an integrated serial thin-film solar cell module and its manufacturing method. In particular, it relates to an integrated tandem thin-film silicon solar cell module with an intermediate layer and a manufacturing method thereof. Background technique [0002] It is known that in a multi-junction type photoelectric conversion element, such as a solar cell, in which a plurality of semiconductor photoelectric conversion units having photoelectric conversion performance are stacked, combining upper-layer monomers and lower-layer monomers having different wavelength absorption bands is important for improving power conversion efficiency. very effective. [0003] By providing the transparent intermediate layer with the performance of spectrally distributing incident light energy to each junction unit, for example, having the performance of reflecting short-wavelength light and transmitting long-wavelength light, the p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/04
CPCH01L31/077H01L31/076H01L27/1423Y02E10/548H01L31/046H01L31/0463Y02E10/547
Inventor 村田正义
Owner 村田 正义
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