Piezoelectric crystal element

A technology of piezoelectric crystals and piezoelectric elements, applied in piezoelectric devices/electrostrictive devices, manufacturing/assembly of piezoelectric/electrostrictive devices, material selection for piezoelectric devices or electrostrictive devices, etc. , can solve the problems of low piezoelectric coefficient, not widely used, difficult to synthesize, etc.

Active Publication Date: 2010-09-15
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF0 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the low resistivity of lithium niobate crystals, its maximum operating temperature does not exceed 650°C, which greatly limits the application of piezoelectric devices made of it.
[

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Piezoelectric crystal element
  • Piezoelectric crystal element
  • Piezoelectric crystal element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0078] Using high-purity CaCO 3 、 Ta 2 o 5 、Al 2 o 3 , SiO 2 Raw materials, according to Ca: Ta: Al: Si = 3: 1: 3: 2 ingredients, after mixing, briquetting, high temperature sintering into polycrystalline materials, and then use the melt pulling method for crystal growth to obtain Ca 3 TaAl 3 Si 2 o 14 (CTAS) crystals. Orientate, cut, grind and polish the crystal, and process it into X-cut discs with a diameter of 9mm and a thickness of 0.35mm, and then coat Pt electrodes on both X surfaces, sinter at high temperature, and finally weld on the Pt electrodes The Pt lead is attached to complete the preparation of the CTAS high temperature piezoelectric crystal element.

[0079] Then the CTAS high temperature piezoelectric crystal element is placed in a special high temperature furnace, the lead wire is connected with a special sample clamp, and the resistance in the high temperature range from room temperature to 900 °C is measured with a Keithley 2410 measuring instrume...

Embodiment 2

[0081] Using high-purity CaCO 3 , Nb 2 o 5 、Al 2 o 3 , SiO 2 Raw materials, according to Ca: Nb: Al: Si = 3: 1: 3: 2 ingredients, after mixing, briquetting, high temperature sintering into polycrystalline materials, and then use the melt pulling method for crystal growth to obtain Ca 3 NbAl 3 Si 2 o 14 crystals. The crystal is oriented, cut, ground, polished, processed into a Y-cut disc with a diameter of 9mm and a thickness of 0.35mm, and then coated with Pt electrodes on both Y surfaces, sintered in a high temperature environment, and finally welded on the Pt electrodes The Pt lead is attached to complete the preparation of the high temperature piezoelectric crystal element.

Embodiment 3

[0083] Using high-purity CaCO 3 , SrCO 3 、 Ta 2 o 5 、Al 2 o 3 , SiO 2 Raw materials, according to Ca: Sr: Ta: Al: Si = 2.9: 0.1: 1: 3: 2 ingredients, mixed, compacted, high-temperature sintered polycrystalline material, and then filled into the iridium crucible, put the crucible into In the cavity of the intermediate frequency induction heating crystal growth pulling furnace, the protective atmosphere is N 2 +0.5%O 2 . The specific growth process includes heating up the polycrystalline material for 3 hours until the polycrystalline material melts, and keeping the temperature for 4 hours to stabilize the melt; using X-direction seed crystals, and starting to pull and grow at about 50°C higher than the melting temperature; using a rotation speed of 15rpm, pulling The speed is 1 mm / h. At the end of the growth, the crystal is lifted from the melt, and the temperature is lowered at a rate of 100 ° C per hour, and Ca is obtained after cooling. 2.9 Sr 0.1 TaAl 3 Si 2 o ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a piezoelectric crystal element and belongs to the field of crystal elements. The piezoelectric crystal element comprises a piezoelectric crystalline material (1), an electrode layer (2) and a lead (3). A chemical formula of the piezoelectric crystal material is A3+xB1+yAl3+zSi2+mO14+n, wherein x is more than or equal to -0.2 and less than or equal to 0.2; y is more than or equal to -0.2 and less than or equal to 0.2; z is more than or equal to -0.2 and less than or equal to 0.2; m is more than or equal to -0.2 and less than or equal to 0.2; n is more than or equal to -1.4 and less than or equal to 1.4; A is Ca, Sr or combination of the two elements; and B is one of Ta, Nb or Sb, or combination of more of the three elements. The maximum service temperature of the piezoelectric crystal element can reach 1,000 DEG C; and the piezoelectric crystal element has the characteristics of large high temperature electrical resistivity, large piezoelectric coefficient, large electro-mechanical coupling factor, no phase change from the room temperature to a melting point, low price and the like.

Description

technical field [0001] The invention relates to a piezoelectric crystal element and belongs to the field of crystal elements. Background technique [0002] When some dielectric crystals are deformed under the action of external force, positive and negative polarized charges will appear on some of its surfaces. There is no action of electric field, but only due to strain or stress, electric polarization is generated in the crystal. The phenomenon is called positive piezoelectric effect, also known as piezoelectric effect. When an alternating electric field is applied to the piezoelectric material, the piezoelectric material not only produces polarization, but also produces strain and stress. This phenomenon of strain or stress produced by an electric field is called the inverse piezoelectric effect. [0003] Piezoelectric devices are mostly made using the positive piezoelectric effect of piezoelectric materials. According to this characteristic, they can be used to measure ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L41/08H01L41/18H01L41/22
CPCH01L41/18H10N30/85
Inventor 郑燕青孔海宽涂小牛陈辉施尔畏
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap