Check patentability & draft patents in minutes with Patsnap Eureka AI!

Substrate processing device, substrate processing method, coating and developing apparatus, coating and developing method and storage medium

A technology for a substrate processing device and a substrate processing method, which is applied in the fields of developing methods, storage media, and coatings, can solve problems such as non-identity, and achieve the effects of improving wettability, suppressing development defects, and suppressing the decline in yield

Active Publication Date: 2010-09-22
TOKYO ELECTRON LTD
View PDF2 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

That is, it is not a device capable of solving the above-mentioned problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Substrate processing device, substrate processing method, coating and developing apparatus, coating and developing method and storage medium
  • Substrate processing device, substrate processing method, coating and developing apparatus, coating and developing method and storage medium
  • Substrate processing device, substrate processing method, coating and developing apparatus, coating and developing method and storage medium

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0092] For the heating apparatus 1 which is an embodiment of the substrate processing apparatus of the present invention, refer to Fig. figure 1 , figure 2 Be explained. This heating device 1 performs the PEB treatment described in the background art on the wafer W coated with a resist and exposed, and further supplies the atomized developing solution to the above-mentioned substrate W. When supplying the developing solution to the wafer W in the developing device, prewetting is performed to improve the wettability of the developing solution, or a developing process is performed using the atomized developing solution. The above-mentioned resist has water repellency, and when subjected to an exposure process along a predetermined pattern, the exposed portion becomes soluble in a developing solution. The static contact angle of this resist with respect to water is, for example, 80° or more. In addition, the diameter of the wafer W is, for example, 300 mm to 450 mm.

[0093...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention has been devised in order to solve the problems, and an object of the present invention is to provide a substrate treatment apparatus and a substrate treatment method, which are designed to heat an exposed substrate and capable of suppressing a development failure and a reduction in yield of wafers and reducing loads of processes that are performed by an apparatus located at the subsequent stage of the substrate treatment apparatus, and to provide a coating and developing apparatus, a coating and developing method and a storage medium. The substrate treatment apparatus includes a heating plate that heats the substrate prepared by coating a surface of the substrate with a resist and exposing the resist-coated substrate to light; a surface treatment liquid atomizing unit that atomizes a surface treatment liquid used to improve wettability of the substrate with a developer that is supplied onto the resist; a cooling unit that cools the substrate heated by the heating plate; and a surface treatment liquid supply unit that supplies the atomized surface treatment liquid onto the substrate for a portion of the period from the time when the substrate is heated until the cooling means terminates the cooling of the substrate.

Description

technical field [0001] The present invention relates to a substrate processing device and a substrate processing method for heat-treating a substrate coated with a resist on its surface and further exposed, a coating including the substrate processing device, a developing device, and a coating including the substrate processing method , developing method and storage medium. Background technique [0002] In the photolithography process, which is one of the semiconductor manufacturing processes, a resist is applied to the surface of a semiconductor wafer (hereinafter referred to as wafer), and the resist is exposed in a predetermined pattern and then developed to form a resist pattern. . Such processing is generally performed using a system in which an exposure device is connected to a resist coating and development coating and development device. [0003] A heating module (PEB module) for performing heat treatment (PEB treatment) on the exposed wafer is installed in this co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027H01L21/00
CPCH01L21/6715H01L21/67109H01L21/67748G03F7/0025G03F7/405G03F7/70875
Inventor 吉田勇一有马裕山本太郎吉原孝介
Owner TOKYO ELECTRON LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com