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Semiconductor light emitting device and method for preparing light emitting diode

A technology for light-emitting diodes and light-emitting devices, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the bonding quality and firmness of multi-layer structures and conductive substrates, and achieve tight bonding, good quality, and not easy to loosen. and shedding effect

Active Publication Date: 2010-09-22
LATTICE POWER (JIANGXI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This bent bonding layer reduces the quality and robustness of the bond between the multilayer structure and the conductive substrate

Method used

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  • Semiconductor light emitting device and method for preparing light emitting diode
  • Semiconductor light emitting device and method for preparing light emitting diode
  • Semiconductor light emitting device and method for preparing light emitting diode

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Embodiment Construction

[0036] The following descriptions are given to enable one skilled in the art to make and use the invention, and they are presented in the context of a particular application and its requirements. Various modifications to the disclosed embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be applied to other embodiments and applications without departing from the scope of the invention. Accordingly, the invention is not intended to be limited to the embodiments given, but is to be accorded the widest scope consistent with the appended claims.

[0037] Embodiments of the present invention provide a technique for fabricating III-V nitride semiconductor-based light emitting diodes (LEDs) using wafer bonding. Generally speaking, it is difficult to obtain a complete contact surface for solder bonding of two uneven bonding surfaces, and the bonding strength is also low. Embodiments of the present technology facilitate the for...

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PUM

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Abstract

The invention discloses a semiconductor light emitting device and a method for preparing a light emitting diode. In the method, an InGaAlN-based LED multilayer structure is prepared on a growth substrate; an ohmic contact layer is deposited on the LED multilayer structure; and the edge of the ohmic contact layer is trimmed, so that the center surface of the ohmic contact layer is sufficiently higher than the edge; in addition, a first metal binding layer is deposited on the LED multilayer structure; a second metal binding layer is deposited on the other conductive substrate; the pressure welding is carried out on the LED multilayer structure and the conductive substrate; and the growth substrate is removed.

Description

field of invention [0001] The present invention relates to light emitting semiconductor devices and manufacturing methods. More specifically, the present invention relates to the technology of manufacturing light-emitting diodes based on III-V nitride semiconductor materials by wafer bonding. Background technique [0002] Light-emitting diodes (LEDs) that emit short-wavelength visible light, especially those based on III-V nitride semiconductor materials, are increasingly used. Most of the initial applications of LEDs were limited to applications such as indicator lights and digital displays. Today, due to technological breakthroughs in the development of semiconductor materials and manufacturing processes, LEDs can emit multiple colors of light with high levels of brightness, lower energy consumption, and lower costs than before. Therefore, LEDs are widely used in various consumer and commercial products such as traffic lights, flashing lights, large-screen video displays...

Claims

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Application Information

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IPC IPC(8): H01L33/00
Inventor 江风益王立
Owner LATTICE POWER (JIANGXI) CORP