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Content addressable memory

A technology for addressing memory and content, applied in the field of memory, can solve problems such as complex timing control and strict timing requirements of comparison circuits

Inactive Publication Date: 2010-10-13
INST OF ACOUSTICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0019] The object of the present invention is to simplify the comparison process, reduce the on-resistance of the matching signal line, and improve comparison speed, thus providing a content-addressable memory

Method used

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Examples

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Embodiment Construction

[0056] The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments.

[0057] Such as figure 2 As shown, in the first embodiment of the present invention, the CAM core unit includes a storage unit 111 storing one bit of data and a comparison circuit unit 212 . Among them, the storage unit 111 and Figure 1A The storage unit 111 of the content-addressable memory core unit shown in the prior art is the same, including: two cross-coupled inverters 121 and 122, node D stores one bit of data, and node D To store the complementary value of the bit data, the gates of transistors 131 and 132 are both coupled to word line 141 (WL), and transistors 131 and 132 are also coupled to bit line (BL) 142 and complementary bit line respectively 143. figure 2 The N-type MOS transistor 233 and the N-type MOS transistor 234 in the comparison circuit unit 212 are shown in series, and are respectively coupled to the sear...

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Abstract

The invention provides a content addressable memory. The content addressable memory comprises a plurality of core units; the core unit comprises a storage unit and a comparison circuit unit; the comparison circuit unit comprises an N-type MOS transistor; and the N-type MOS transistor is connected in series between an input matching wire and an output matching wire. The content addressable memory is characterized in that: the comparison circuit unit also comprises a P-typed MOS transistor; a grid of the P-typed MOS transistor is coupled with a grid of the N-type MOS transistor; a source of the P-typed MOS transistor is coupled with a high level end or the output matching wire of the core unit; and correspondingly, a drain of the P-typed MOS transistor is coupled with the output matching wire of the core unit or the high level end. The charge and discharge of the matching wires of the core unit are determined by search signal wires and stored data so as to simplify the comparison time sequence and the design complexity and improve the highest working frequency to a certain degree; and the content addressable memory has the advantages in the aspects of access speed and power consumption in a hybrid connection mode.

Description

technical field [0001] The present invention relates to memory, in particular to a content addressable memory. Background technique [0002] Content-Addressable Memory (CAM) is a content-addressable memory for specific high-speed search applications. In common memory such as RAM (random access memory, random access memory) applications, a user provides a memory address, and the memory returns data stored at the address according to the address. In the application of content-addressable memory, the user provides a piece of data, and the content-addressable memory will traverse the entire storage space to search whether the data exists in the memory. If it is, it is a hit, and the content-addressable memory will return a or addresses of multiple hit data. [0003] Content-addressable memory is a special kind of memory that can search the entire memory in a single operation, so in search applications, content-addressable memory is much faster than ordinary memory. The fast s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C15/04G11C8/00
Inventor 华斯亮闫浩杨磊洪缨王东辉侯朝焕
Owner INST OF ACOUSTICS CHINESE ACAD OF SCI
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