Semiconductor structure and forming method thereof

A semiconductor and conductive layer technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problem that the MOSFET structure cannot adapt to higher and higher requirements, and achieve the effect of low power consumption
CN101866931AInactive Publication Date: 2010-10-20INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Publication Date
2010-10-20
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a semiconductor structure and a forming method thereof. The structure comprises a semiconductor substrate and a flash memory device formed on the semiconductor substrate, wherein the flash memory device comprises a channel region formed on the semiconductor substrate and a grid stack formed on the channel region, wherein the gird stack comprises a first gird dielectric layer formed on the channel region, a first conductive layer formed on the first grid dielectric layer, a second grid dielectric layer formed on the first conductive layer, a second conductive layer formed on the second grid dielectric layer, a high doping first conductive type region and a high doping second conductive type region; and the high doping first conductive type region and the high doping second conductive type region are respectively positioned at two sides of the channel region and have opposite conductive types. The invention can be used for realizing information storage of the Tunneling FET (Field Effect Transistor).
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Description

Technical field

[0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a TFET (Tunneling FET, tunneling field effect transistor) structure and a method of forming the same. Background technique

[0002] As the size of the MOSFET (Metal Oxide Semiconductor Field Effect Transistor) continues to shrink, the traditional MOSFET structure can no longer meet the increasingly high requirements. Therefore, a TFET is proposed to meet the ever-increasing requirements of device switching performance.

[0003] When a certain turn-on voltage is applied to the gate of the TFET, due to the quantum tunneling effect, the barriers on the source and drain regions on both sides of the channel region become smaller, so that the source and drain regions are quickly turned on.

[0004] With the development of semiconductor technology, there is an urgent need to further reduce the turn-on voltage of the gate to meet the rapidly increasing requirements fo...

Claims

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