Organic electroluminescent device
An electroluminescence device and a luminescence technology, which are applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems of increased cost, inability to prepare large-area screens, and complicated preparation processes, so as to improve light extraction The effect of high efficiency, improved light extraction efficiency, and simple preparation process
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Embodiment 1
[0049] Embodiment 1 (1-1 to 1-6):
[0050] ITO(180nm)+PEDOT:PSS(100nm)(rectangular network structure)
[0051] / NPB(40nm) / Alq 3 :C545T(30nm, 1.3%) / Alq 3 (20nm) / LiF(0.5nm) / Al(150nm)
Embodiment 2
[0053] The structure of the device is the same as that of Example 1, except that a film with a microlens structure is added on the device substrate of this example, and the diameter of the microlens is 45 nm.
[0054] The preparation process step of embodiment 1:
[0055] (1) substrate cleaning: with the step (1) of comparative example 1;
[0056] (2) Prepare a layer of rectangular grid-shaped isolation column layer on the above-mentioned substrate, this layer is used to locate the grid position, and the material of the isolation column is polyimide;
[0057] (3) Plasma treatment is carried out on the surface of the above-mentioned substrate, so that it does not infiltrate the surface of the polyimide spacer column during printing, but still maintains good wettability to the surface;
[0058] (4) A layer of PEDOT:PSS is prepared by inkjet printing on the above substrate, and each PEDOT:PSS droplet is dropped in the positioned grid, finally forming a rectangular network struct...
Embodiment 3
[0067] Embodiment 3 (3-1 to 3-6)
[0068] ITO(180nm)+PANI(120nm)(rectangular network structure) / NPB(20nm) / BAlq:TBPe(30nm, 2%) /
[0069] Alq 3 (20nm) / LiF(0.5nm) / Al(150nm)
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