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Chemical pinning to direct addressable array using self-assembling materials

A self-assembly, chemical contrast technology, applied in the field of nanotubes or volumes, can solve problems that are not suitable for manufacturing nanostructures

Inactive Publication Date: 2010-12-15
SEAGATE TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since lithography is limited by the diffraction limit, the resolution of conventional lithography is usually limited to about 50nm half-pitch
Conventional lithography may therefore not be suitable for fabricating such nanostructures for bit-patterned magnetic storage media.

Method used

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  • Chemical pinning to direct addressable array using self-assembling materials
  • Chemical pinning to direct addressable array using self-assembling materials
  • Chemical pinning to direct addressable array using self-assembling materials

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Embodiment Construction

[0023] The present invention relates to methods of fabricating nanostructured devices and devices fabricated using such methods. In one aspect, the present invention provides a method to achieve long-range order and precise positional control in naturally self-assembled nanostructures.

[0024] The invention can be used in the manufacture of data storage media. A data storage medium typically includes a servo area and a bit area. The servo area includes information for controlling the position of the recording head and the timing of read and write operations. The bit field is used to store information written to or read from the medium. In one aspect, the present invention allows for the integration of self-assembly processes into nanoimprinting of BPMs for bit regions with high density periodic dot patterns and servo regions with medium to high density periodic / aperiodic dot / line patterns Formwork in progress.

[0025] In another aspect, the present invention uses substra...

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Abstract

A method includes: providing a substrate having a plurality of chemically contrasted alignment features, and depositing a self-assembled material on at least a portion of the substrate, wherein the position and / or orientation of substantially spherical or cylindrical domains of the self-assembled material is directed by the alignment features, to form a nanostructure pattern, and wherein the period of the alignment features is between about 2 times and about 10 times the period of the spherical or cylindrical domains. An apparatus fabricated according to the method is also provided.

Description

Background technique [0001] The structure of components having dimensions on the order of nanometers is considered for applications in the fields of optics, electronics, mechanics, magnetism, and the like. Nanostructures include, for example, a variety of structures known as nanoparticles, nanotubes, or quantum dots, and may serve as building blocks for ordered and composite materials. [0002] For data storage media including bit patterned media (BPM) and discrete magnetic track media (DTM), patterning of ultra-high density dot arrays or line arrays with periods as small as 25nm or less is desirable. needs. However, since lithography is limited by the diffraction limit, the resolution of conventional lithography is usually limited to about 50nm half-pitch. Conventional lithography may therefore not be suitable for fabricating such nanostructures for bit-patterned magnetic storage media. [0003] It would be desirable to have a high throughput patterning method for forming ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00B82B1/00G11B7/24035
CPCB82Y10/00B81C1/00031G11B5/82G11B5/743G11B5/855B81C2201/0149G11B5/746G03F7/0002Y10T428/24802B05D5/00B05D1/322B05D3/06B05D3/00G11B5/59633G11B5/84
Inventor 肖帅刚X·杨
Owner SEAGATE TECH LLC