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Polysilicon selective emitter solar cell manufacture process

A solar cell and manufacturing process technology, applied in sustainable manufacturing/processing, final product manufacturing, circuits, etc., can solve problems such as high cost, complicated process, and impact on material quality, and achieve high production efficiency, simple process, and energy efficiency. The effect of low consumption

Inactive Publication Date: 2010-12-15
江苏韩华太阳能电池及应用工程技术研究中心有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this process is complex and costly, and the multi-step heat treatment process seriously affects the quality of the material. It does not meet the dual requirements of high efficiency and low cost for manufacturing solar cells, and cannot be applied in industrialized mass production.

Method used

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  • Polysilicon selective emitter solar cell manufacture process
  • Polysilicon selective emitter solar cell manufacture process
  • Polysilicon selective emitter solar cell manufacture process

Examples

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Embodiment Construction

[0020] like figure 1 A polysilicon selective emitter solar cell using wet chemical etch-back is shown, including polysilicon wafer 1 and silicon wafer 1 diffused and junctioned to form a low-concentration phosphorus-doped region 2, and the front metallized electrode region 5 below The local high-concentration phosphorus doping region 3 .

[0021] The schematic cross-sectional view of the solar cell continuous process steps adopting the process of the present invention is as follows Figure 2 to Figure 6 ;

[0022] The specific steps are as follows:

[0023] After the polycrystalline silicon wafer is dedamaged and textured (conventional method), it is diffused in a tubular diffusion furnace (conventional method), such as figure 2 As shown, the low-concentration phosphorus-doped region 2 and the high-concentration phosphorus-doped region 3 are completed in the same diffusion process. On the emitter, according to the front metallization pattern area 5, the etch-back barrier ...

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Abstract

The invention discloses a polysilicon selective emitter solar cell manufacture process, which comprises the steps of: carrying out surface damage removal, etching treatment and diffusion knotting on a polycrystalline silicon wafer; carrying out screen printing on an emitting layer with etching-back blocking slurry according to a metallization pattern area and prebaking; carrying out local wet chemical etching back after phosphorosilicate glass removal is carried out on local wafer with etching-back blocking slurry printed on the metallization area; removing the etching-back blocking slurry; carrying out pn junction isolation while removing the phosphorosilicate glass; depositing an SiNx or SiO2 / SiNx film on the surface and carrying out surface passivation; and printing a back surface electrode and an aluminum back surface field to form a front surface metallization electrode, and sintering to form a finished product of the polysilicon selective emitter solar cell. In the invention, a mixed solution of hydrofluoric acid and nitric acid is adopted for etching back, porous silicon is not generated on the surface after etching back, and the surface topography is not changed; and because only one high temperature process is needed, the invention has simple process, high production efficiency and low energy consumption and is applicable to large-scale industrial production.

Description

Technical field: [0001] The invention relates to a polysilicon selective emitter solar cell manufacturing process. Background technique: [0002] The development direction of solar cells is low cost and high efficiency, and the selective emitter structure is one of the most promising methods to achieve high efficiency in the production process of p-n crystalline silicon solar cells. [0003] The main feature of selective diffusion solar cells is high concentration of phosphorus doping in the metallization area and low concentration of phosphorus doping in the illumination area. The purpose is to improve the surface passivation quality without reducing the quality of the gold half-contact, reduce the surface recombination and emission Composite, improve the photon response in the blue light band, and improve battery performance. Selective diffusion solar cells have a good gold-half ohmic contact; the metallization area is thick and the diffusion area has a deep junction, and...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 魏青竹王景霄马跃穆汉
Owner 江苏韩华太阳能电池及应用工程技术研究中心有限公司
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