Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Polishing process for ultrahigh-resistivity silicon polished wafer

A silicon polishing sheet and resistivity technology, which is applied to surface polishing machine tools, grinding/polishing equipment, manufacturing tools, etc., can solve problems such as the difficulty in research and development of ultra-high resistivity silicon polishing sheets, and achieve simplified wax removal and cleaning procedures and Equipment, easy to clean, and the effect of improving flatness

Active Publication Date: 2011-01-05
ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD +1
View PDF3 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This brings greater difficulty to the development of ultra-high resistivity silicon polished wafers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing process for ultrahigh-resistivity silicon polished wafer
  • Polishing process for ultrahigh-resistivity silicon polished wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0028] Embodiment: The wax-free polishing process of a 6-inch 500 μm thick ultra-high resistivity silicon wafer is as follows:

[0029] Experimental silicon wafer: 6-inch zone melting silicided wafer; crystal orientation: P; resistivity: 12000-20000Ω·cm; thickness: 520μm; quantity: 200 pieces.

[0030] Processing equipment: wax-free single-sided polishing system, rewinding machine, and unscrambling machine.

[0031] Auxiliary materials: rough polishing liquid, fine polishing liquid, deionized water.

[0032] Process parameters: The temperature of the polishing liquid is 35°C, and the temperature of the polishing machine plate is 45°C.

[0033] The pressure and time in the four steps of rough polishing are: ①, pressure: 2.55bar, polishing time: 3min; ②, pressure: 3.45bar, polishing time: 20min; ③, pressure: 1.25bar, polishing time: 15s;④ , Pressure: 1.25bar, Polishing time: 15s.

[0034] The pressure and time in the four steps of fine polishing are: ①, pressure: 1.55bar, pol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a polishing process for an ultrahigh-resistivity zone-melting silicon polished wafer. Wax-free single-surface polishing is adopted in the process and comprises rough polishing and fine polishing; the rough polishing and the fine polishing are respectively carried out according to pressure and time parameters set in four steps; the polishing solution temperature of the rough polishing and the fine polishing is controlled in a range of 30-40 DEG C; and the large disk temperature of a polishing machine is controlled in a range of 40-60 DEG C. In the process, polishing pressure and time suitable for producing an ultrahigh-resistivity silicon wafer are worked out, quality indexes of flatness, and the like of the polished surface of the silicon wafer are improved by adopting wax-free polishing, especially, an wafer adhering agent is discarded, the contamination of organic matter, and the like is reduced to the greatest extent and the polishing wafer is easy to clean, thereby simplifying wax removal cleaning program and equipment, reducing the cost of the polishing silicon wafer and improving the labor productivity.

Description

technical field [0001] The invention relates to a manufacturing process for silicon wafers used in the manufacture of new power electronic devices and semiconductor power devices, in particular to a polishing process for ultra-high resistivity silicon polishing wafers. Background technique [0002] CMP (mechanical-chemical polishing) is a new technology that can provide comprehensive planarization in the manufacturing process of VLSI. This technology is polished with the help of an alkaline solution containing colloidal silicon suspended particles. It is a mechanical A process in which action and chemical action are balanced. Its chemical action is: In this way it is possible to actually planarize the wafer surface. [0003] In the chemical reaction, the silicon atoms on the surface react with the water molecules and OH- in the polishing liquid, and connect with the hydrogen bonds outside the underlying silicon through hydrogen-oxygen bonds, and then pass through the fric...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/00
Inventor 李翔李科技黄建国
Owner ZHONGHUAN ADVANCED SEMICON MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com