Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof

A technology of hydrogen peroxide and micro-etching liquid is applied in the field of micro-etching, which can solve the problems of blackening of etched panels and unstable etching speed, and achieve the effects of stable micro-etching rate, low cost and smooth board surface.

Active Publication Date: 2011-02-02
SHENZHEN JECH TECH
View PDF4 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of this, the embodiment of the present invention provides a sulfuric acid / hydrogen peroxide micro-etching solution stabilizer to solve the technical problems in the prior art that the etching speed is unstable and the etched panel is black due to the decomposition of hydrogen peroxide

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof
  • Sulfuric acid/hydrogen peroxide microetchant stabilizer and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0036] The embodiment of the present invention also provides a preparation method of sulfuric acid / hydrogen peroxide micro-etching solution stabilizer, the steps are as follows:

[0037] Mix the following components by weight percentage, stir and process to obtain the sulfuric acid / hydrogen peroxide micro-etching liquid stabilizer of the embodiment of the present invention,

[0038] Alcohol 3-6%

[0039] Organic amine 10-15%

[0040] Sulfonic acid compound 2-5%

[0041] Water 40-85%.

[0042] Further, in the preparation method of the sulfuric acid / hydrogen peroxide microetching solution stabilizer according to the embodiment of the present invention, after mixing the above components, 3-5% sulfuric acid is added, the concentration of the sulfuric acid is not limited, preferably 98% sulfuric acid. The above-mentioned stirring treatment is carried out at normal temperature and pressure, and the time is not limited, preferably under the condition of 0.8-1.3 atmospheric pressure,...

Embodiment 1

[0046] The microetching liquid stabilizer of the present embodiment, its component and weight percent are as follows:

[0047] 1,4 Butanediol 3%

[0048] Ethanolamine 3%, n-Butylamine 7%

[0049] Aminosulfonic acid 2%

[0050] Sulfuric acid 3%

[0051] Water 83%.

[0052] Prepared according to the above ratio, add the above-mentioned microetching liquid stabilizer to the H 2 o 2 The concentration is 12g / L, H 2 SO 4 In the microetching solution with a concentration of 120g / L, the microetching rate was measured at a temperature of 30°C.

Embodiment 2

[0054] The microetching liquid stabilizer of the present embodiment, its component and weight percent are as follows:

[0055] 1,4 Butanediol 5%

[0056] n-octylamine 12%

[0057] Cyclopropanesulfonic acid 3%

[0058] Sulfuric acid 3%

[0059] Water 77%.

[0060] Prepared according to the above ratio, add the above-mentioned microetching liquid stabilizer to the H 2 o 2 The concentration is 12g / L, H 2 SO 4 In the microetching solution with a concentration of 120g / L, the microetching rate was measured at a temperature of 30°C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention is applied in the field of microetching, and provides a sulfuric acid / hydrogen peroxide microetchant stabilizer and a preparation method thereof. The sulfuric acid / hydrogen peroxide microetchant stabilizer comprises the following components in percentage by weight: 3 to 6 percent of alcohol, 10 to 15 percent of organic amine, 2 to 5 percent of sulfonic acid and 40 to 85 percent of water. High-negativity O and N atoms of the alcohol, the organic amine and the sulfonic acid in the stabilizer form hydrogen bonds with free groups [HO.2] decomposed by hydrogen peroxide, so the sulfuric acid / hydrogen peroxide microetchant stabilizer effectively reduces the activity of the [HO.2], greatly reduces the decomposition of the hydrogen peroxide, maintains the concentration of the hydrogen peroxide in microetchant, and ensures stable microetching rate in the microetching process of the sulfuric acid / hydrogen peroxide (H2SO4 / H2O2) microetchant, and smooth, uniform and non-black board surfaces after the microetching.

Description

technical field [0001] The invention belongs to the field of micro-etching, in particular to a sulfuric acid / hydrogen peroxide micro-etching solution stabilizer and a preparation method thereof. Background technique [0002] In the process of printed circuit board processing, many processes require micro-etching pre-treatment, electroless copper plating, full-board electroplating, pattern electroplating, inner black oxidation, hot air leveling, etc. The quality of the micro-etching effect often affects the quality of the next process. h 2 SO 4 / H 2 o 2 Microetching solution is a superior one, which has the advantages of constant microetching rate, large copper capacity, simple post-treatment, and no pollution. However, H 2 SO 4 / H 2 o 2 The hydrogen peroxide in the system is easy to decompose, which will make the board surface black and micro-etched unevenly, thus greatly increasing the cost and emission of materials, and the trace amount of chloride ions in the wate...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23F1/16
Inventor 何世武崔磊李建光李明军吴超王大定
Owner SHENZHEN JECH TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com