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3 omega thermal conductivity measurement scheme suitable for metal film material

A technology of metal thin film and metal materials, which is applied in the field of microelectronics, can solve the problems that the suspension bridge structure process cannot be realized, large measurement errors, complex process steps, etc.

Inactive Publication Date: 2011-02-16
FUDAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Because the 3omega method needs to use the metal film as the heating and thermal element of the test structure, if the 3omega method is directly applied to the metal film thermal conductivity measurement, the thermal properties of the heating element and the measured material are close (both have high thermal conductivity) value of the metal thin film) and introduce a large measurement error, so the traditional 3omega measurement method cannot be directly applied to the metal thin film material
[0003] On the other hand, other electrical methods currently applicable to the measurement of thermal conductivity of metal thin films require the preparation of special sample structures, that is, to prepare the measured thin film into a nearly one-dimensional suspend bridge structure to reduce measurement errors, but This structure requires complex process steps. For nano-thin film samples, it is almost impossible to prepare nano-thick suspension bridge structures.

Method used

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  • 3 omega thermal conductivity measurement scheme suitable for metal film material
  • 3 omega thermal conductivity measurement scheme suitable for metal film material
  • 3 omega thermal conductivity measurement scheme suitable for metal film material

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Embodiment Construction

[0042] Hereinafter, the present invention will be described more specifically with reference to examples in conjunction with illustrations. The present invention provides preferred embodiments, but should not be construed as being limited to the embodiments set forth herein.

[0043] figure 1 Experimental structure for conventional 3omega thermal conductivity measurements. A nanoscale dielectric thin film is deposited on a silicon substrate, and the metal thin film is patterned on the surface of the dielectric thin film by means of deposition, photolithography steps or nanoimprinting to prepare a narrow-line four-terminal test structure.

[0044] figure 2 It is the circuit diagram of the 3omega thermal conductivity measurement experimental instrument. In order to measure the 3ω signal at the voltage output end of the metal heating wire, the signal generator inside the lock-in amplifier generates an input AC signal with an angular frequency of ω. According to the working pri...

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Abstract

The invention belongs to the technical field of microelectronics, and in particular discloses a 3 omega thermal conductivity measurement method suitable for a metal film material. In the method, a group of frequency-related heat flow ratios is obtained through an experimental fitting means by utilizing a 3 omega test structure and frequency-related thermal response characteristic based on an improved analytical model. The thermal resistance of an experimental material is deduced from the ratios, and a thermal conductivity value of a tested sample is finally obtained. The thermal conductivity measurement method of the invention can provide rapid and accurate thermal conductivity information of a metal film, so that the application range of 3 omega electrical measurement technology is greatly extended. The 3 omega thermal conductivity measurement method is suitable for measuring nanoscale films, has a simple sample structure, and avoids a complex process structure in the conventional electrical measurement method; therefore, the 3 omega thermal conductivity measurement method can be taken as a rapid characterization means for a thermal parameter of the metal film material, and has application prospect in the microelectronic industrial field.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a 3omega thermal conductivity measurement method applicable to metal thin film materials whose film thickness is on the order of nanometers. Background technique [0002] At present, metallic nanostructured thin film materials with high thermal conductivity are widely used in many micro / nanoelectronic devices, optoelectronic devices, interconnect structures, and micromechanical systems. At the same time, with the continuous reduction of the feature size of integrated circuit systems, the thermal performance characterization technology of nanostructured materials has received more and more attention. The latest ITRS will establish a joint electrical-thermal-mechanical characteristic method as an integrated circuit performance modeling and simulation method. one of the most important challenges. Therefore, the establishment of thermal experimental characteriza...

Claims

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Application Information

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IPC IPC(8): G01N25/20
Inventor 宗兆翔刘冉仇志军沈臻魁
Owner FUDAN UNIV
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