Supercharge Your Innovation With Domain-Expert AI Agents!

System and method for supplying grinding fluid by chemically mechanical polishing (CMP)

A technology of supplying system and grinding fluid, applied in surface polishing machine tools, grinding devices, grinding machine tools, etc., can solve problems such as yield reduction and scratches

Inactive Publication Date: 2011-04-06
SEMICON MFG INT (SHANGHAI) CORP
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the surface of the wafer will be scratched by the condensed particles of the grinding fluid during the CMP process, resulting in a decrease in yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • System and method for supplying grinding fluid by chemically mechanical polishing (CMP)
  • System and method for supplying grinding fluid by chemically mechanical polishing (CMP)
  • System and method for supplying grinding fluid by chemically mechanical polishing (CMP)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further elaborated below in conjunction with the accompanying drawings.

[0041] The grinding liquid supply system that the embodiment of the present invention proposes is as figure 2 shown, with figure 1 Compared with the grinding liquid supply system in the prior art shown, the injection device 201 , the return device 202 and the discharge device 203 are mainly added. Correspondingly, an inlet F and two outlets G, H are added to the supply pool 102, the inlet F is used to connect the injection device 201, the outlet G is used to connect the return device 202, and the outlet H is used to connect the Exhaust device 203. And the standby pool 101 has an inlet I added, which is used to connect the backflow device 202 . Above-mentioned connection all is to connect with hollow conduit. The injection device 201 is connected to the inlet F, and i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a system for supplying a grinding fluid, comprising a spare pool (101), a supply pool (102), a filter device (103), an injection device (201), a backflow device (202) and a discharger (203), wherein the supply pool (102) further comprises an inlet F, an outlet G and an outlet H; the spare pool (101) comprises an inlet I; the injection device (201) is connected with the inlet F and used for injecting a cleanout fluid into the supply pool (102); the backflow device (202) is respectively connected with the outlet G and the inlet I and used for conveying the grinding fluid in the supply pool (102) to the spare pool (201); and the discharger (203) is connected with the outlet H and used for discharging the fluid in the supply pool (102) completely. The system for supplying the grinding fluid can conveniently wash the insides of the supply pool and the related conduits, and wash away particles formed by polymerizing oxide particles in time, thereby preventing wafers from being scratched resulting from the entering of the particles to the a chemically mechanical polishing (CMP) machine.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, in particular to a grinding liquid supply system and method for chemical mechanical polishing. Background technique [0002] The chemical mechanical polishing (CMP) process is to use mechanical force to act on the surface of the wafer in the atmospheric environment of the clean room, and to generate fracture corrosion power on the surface film layer, so that the surface of the wafer tends to be flattened, so that Subsequent process steps (such as photolithography) are performed. And this part must rely on the chemical substances in the polishing liquid to increase its etching efficiency by reacting. The two most important components in the CMP process are slurry and platen. The grinding liquid is usually made by dispersing some very fine oxide powder particles in an aqueous solution. Polishing pads are mostly made of foamed porous polyurethane. The main ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B24B57/02B24B37/04B24B29/02H01L21/02
Inventor 胡宗福
Owner SEMICON MFG INT (SHANGHAI) CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com