Low-electric leakage high-voltage power supply electrostatic discharge protective circuit realized by utilizing low-voltage component

Abstract

The invention relates to a low-electric leakage high-voltage power supply electrostatic discharge protective circuit realized by utilizing a low-voltage component, which comprises a plurality of totally same module circuits, wherein the power supply end of the first module circuit is coupled with the power supply end of an electrostatic discharge protective circuit; the power supply end of the rest each module circuit is coupled with the grounding end of the previous module circuit; the grounding end of the last module circuit is coupled with the grounding end of the electrostatic discharge protective circuit; each module circuit comprises a conducting path and a detecting circuit; the detecting circuit is coupled with the power supply end and the grounding end of the attributed module circuit and the conducting path; and if the voltage rising speed of the power supply end of the module circuit exceeds a critical value, the detecting circuit conducts the conducting path. Accordingly, the invention can solve the problem of electric leakage of the traditional circuit in the advanced manufacture procedure and is suitable for an electronic system with various working voltages.

Description

technical field [0001] The invention relates to an electrostatic discharge (ESD for short) protection circuit (clamp circuit), in particular to a low-leakage high-voltage power supply electrostatic discharge protection circuit realized by using low-voltage components. Background technique [0002] A general electrostatic discharge protection circuit is arranged between a power terminal and a ground terminal of an electronic system. An ideal ESD protection circuit must be completely off during normal operation of the electronic system, and there should be no leakage. If an ESD pulse occurs, the ESD protection circuit must be turned on to guide the ESD pulse from the power supply terminal to the ground terminal to protect the electronic system. [0003] In the nanoscale complementary metal oxide semiconductor (CMOS) manufacturing process, the gate oxide (gate oxide) becomes thinner with the evolution of the manufacturing process technology, and the working voltage also decrea...

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Problems solved by technology

[0014] It can be seen that the above-mentioned existing electrostatic discharge protection circuit obviously still has inconvenience and defects in structure and use, and needs to be further improved urgently.

In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but for a long time no suitable design has been developed, and the general product has no suitable structure to solve the above-mentioned problems. This is obviously the relevant industry. Urgent problem

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