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High-speed enhanced ultraviolet silicon selective avalanche photodiode and manufacturing method thereof

An avalanche photoelectric technology and a manufacturing method, which are applied to circuits, electrical components, semiconductor devices, etc., to achieve the effects of increasing response speed, increasing breakdown voltage, and increasing responsivity.

Active Publication Date: 2013-03-27
SHENZHEN AIXIESHENG TECH CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

[0007] In order to solve the technical problems existing in existing photodiodes, the present invention provides a high-speed enhanced ultraviolet silicon selective avalanche photodiode with high sensitivity and fast response speed and its manufacturing method

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  • High-speed enhanced ultraviolet silicon selective avalanche photodiode and manufacturing method thereof
  • High-speed enhanced ultraviolet silicon selective avalanche photodiode and manufacturing method thereof
  • High-speed enhanced ultraviolet silicon selective avalanche photodiode and manufacturing method thereof

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Embodiment Construction

[0026] The following will refer to the attached Figure 2-6 The present invention is described in detail:

[0027] figure 2 It is the appearance shape of a single regular octagonal photosensitive region, and the pn junction formed between the P+ regions 201, 203 and n-well 202, 204 in the figure is a light absorption region. The number of concentric rings contained in the appearance shape of a single regular octagonal photosensitive area is not the standard as shown in the figure, and may include more regular octagonal concentric rings.

[0028] image 3 It is a structural diagram of the entire interior of a single regular octagonal concentric ring-shaped photosensitive region according to an embodiment of the present invention, and the dotted line box is a regular octagonal concentric ring-shaped photosensitive region. The P+ region in the N well is the anode of the structure, and the N+ region is the cathode of the structure. The P+ region in the P substrate is the read...

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Abstract

The invention discloses a high-speed enhanced ultraviolet silicon selective avalanche photodiode and a manufacturing method thereof. The photodiode comprises a P-type substrate, wherein an n well is arranged on the P-type substrate; a photosensitive window on the n well is a regularly octagonal concentric ring or is in array arrangement of a plurality of regularly octagonal concentric rings; and the doped types of the concentric rings are an n type and a p type at intervals. The photodiode has the advantages of high sensitivity, high responsiveness and high selectivity.

Description

technical field [0001] The invention relates to an avalanche photodiode, in particular to a high-speed enhanced ultraviolet silicon selective avalanche photodiode and a manufacturing method thereof. technical background [0002] The currently used photodiodes mainly include two types: photoemissive photodiodes, including hollow tube photodiodes, photomultiplier tubes and microchannel photosensitive sheets (MCP); semiconductor photodiodes, which are divided into photocurrent type and photoconductive type. Among them, the photocurrent type is divided into p-n junction type, Schottky barrier type and image sensor, and the p-n junction type is divided into ultraviolet enhanced photodiode, ultraviolet selective photodiode, etc. Photoconductive types include GaAs, GaN, and AlGaN. [0003] Ultraviolet selective gas discharge tubes are widely used in flame detection. It consists of two metal electrodes enclosed in a quartz glass tube filled with hydrogen or a mixture of hydrogen a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/107H01L31/0352H01L31/18
Inventor 金湘亮赵永嘉
Owner SHENZHEN AIXIESHENG TECH CO LTD
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