Leveling and focusing mechanism and mask platform with same

A technology for leveling, focusing, and mask stage, which is applied in the direction of optomechanical equipment, photographic process of pattern surface, optics, etc. It can solve the problems of failure to decouple, complex structure of leveling and focusing mechanism, and large installation distance. problem, to achieve the effect of reducing installation space, simple structure and convenient operation

Active Publication Date: 2011-05-04
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is that the leveling and focusing mechanism of the sub-system of the mask table of the lithography machine has a complex structure, the installation distance in the height direction is large, or the two directions of Rx and Ry cannot be decoupled although the structure is simple.

Method used

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  • Leveling and focusing mechanism and mask platform with same
  • Leveling and focusing mechanism and mask platform with same
  • Leveling and focusing mechanism and mask platform with same

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Embodiment Construction

[0039] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0040] see figure 1 , figure 1 It is a schematic structural diagram of the mask stage sub-system of a stepper lithography machine adopting the leveling and focusing mechanism of the present invention. The mask table subsystem of the stepper lithography machine includes a horizontal adjustment mechanism 103 , an air bearing 104 , a mask table base 105 , and a leveling and focusing mechanism 106 from top to bottom. The illumination system 101 provides a light source for the lithography device; the reticle 102 provides the pattern required for exposure for the lithography device; the horizontal adjustment mechanism 103 provides adjustments in the three degrees of freedom directions of X, Y, and Rz for the mask stage subsystem; The air bearing 104 provides vertical ...

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Abstract

The invention relates to a leveling and focusing mechanism and a mask platform with the same. The leveling and focusing mechanism comprises a bulb differential fine-tuning mechanism and a leveling reed, wherein the bulb differential fine-tuning mechanism is spherically connected to the edge of the leveling reed through the bulb; the edge of the leveling reed is arranged below a base of the mask platform; and the bulb differential fine-tuning mechanism and the middle part of the leveling reed are arranged above a machine frame. The leveling and focusing mechanism provides a vertical regulating mechanism through differential threads, wherein the vertical regulating mechanism has simple structure and precision at micron level and is convenient in operation. In the leveling and focusing mechanism, the problem of decoupling along Rx and Ry directions is solved by combining the spherical connection with flexible hinge. In the invention, the complex of vertical regulating scheme of a mask platform sub-system can be greatly reduced under the condition of ensuring micron-level regulating precision and the vertical mounting height between the mask platform sub-system and the machine frame can be greatly saved.

Description

technical field [0001] The invention relates to a leveling and focusing mechanism and a mask table adopting the leveling and focusing mechanism. Background technique [0002] The photolithography apparatus in the prior art is mainly used in the manufacture of integrated circuits (ICs) or other micro devices. With a photolithographic apparatus, multilayer masks with different mask patterns are sequentially imaged in precise alignment on a photoresist-coated wafer, such as a semiconductor wafer or an LCD panel. Lithography devices are generally divided into two categories, one is a stepping lithography device, the mask pattern is exposed and imaged on one exposure area of ​​the wafer, and then the wafer moves relative to the mask to move the next exposure area to the mask pattern and under the projection objective, the mask pattern is again exposed on another exposed area of ​​the wafer, and the process is repeated until all exposed areas on the wafer have an image of the mas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/207G03F7/20
Inventor 江旭初齐芊枫李生强
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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