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Lateral-diffusion metal-oxide-semiconductor element structure

A technology of oxide semiconductors and metals, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as high on-resistance and low on-resistance

Inactive Publication Date: 2011-05-04
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, a disadvantage of the known LDMOS transistor element 10 described above is its on-resistance (R on ) is still high, and the field still needs an improved LDMOS transistor device with lower on-resistance

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  • Lateral-diffusion metal-oxide-semiconductor element structure
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  • Lateral-diffusion metal-oxide-semiconductor element structure

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Embodiment Construction

[0051] Various technical features of the present invention will be described in detail below with reference to the accompanying drawings and preferred embodiments. However, the drawings are only for reference and auxiliary description, and are not intended to limit the present invention. Under the principle of not departing from the spirit of the present invention, those skilled in the art should understand that some changes and modifications may be made to the details of the various embodiments in the specification.

[0052] A preferred embodiment of the present invention provides a low on-resistance (R on ) structure and layout of a lateral-diffusion N-type metal-oxide-semiconductor (LDNMOS) element, which is particularly suitable for application in a power management IC chip (PMIC).

[0053] see figure 2 and image 3 ,in figure 2 It is a schematic top view of a laterally diffused N-type metal-oxide-semiconductor (LDNMOS) element structure with a playground track-like ...

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Abstract

The invention relates to a lateral-diffusion metal-oxide-semiconductor element structure, which comprises source electrodes, a first field oxide layer, grid electrodes and drain electrodes, wherein the source electrodes are formed in an active region of a playground-runway-shaped layout and comprise a P+ doped region arranged in a P-shaped pit and an N+ doped region; the first field oxide layer encircles the active region of the playground-runway-shaped layout; the grid electrodes of the playground-runway-shaped layout encircles the source electrodes; and the drain electrodes are arranged at the outer sides of the grid electrodes.

Description

technical field [0001] The present invention relates to a semiconductor high voltage element, in particular to a low on-resistance (R on ) of a lateral-diffusion metal-oxide-semiconductor (LDMOS) element structure. Background technique [0002] The current level of semiconductor technology has been able to integrate control circuits, memory, low-voltage operating circuits, and high-voltage operating circuits and components on a single chip to reduce costs and improve operating performance, such as vertical double-diffusion metal -oxide-semiconductor, VDMOS), insulated gate bipolar transistor (insulated gate bipolar transistor, IGBT), and lateral-diffusion metal-oxide-semiconductor (lateral-diffusion metal-oxide-semiconductor, LDMOS) and other high-voltage components fabricated in the chip, It is more commonly used because of its superior switching efficiency (power switching efficiency). The aforementioned high-voltage components are often required to be able to withstand ...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/417H01L29/423H01L29/06
Inventor 颜挺洲黄柏睿林家康林宏泽
Owner UNITED MICROELECTRONICS CORP
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