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Film magnetoelectric composite material and preparation method thereof

A magnetoelectric composite material and composite material technology, which are applied in the field of thin-film magnetoelectric composite materials and their preparation, can solve the problems of low magnetostriction of the ferromagnetic phase, influence the improvement of the magnetoelectric conversion coefficient of the material, etc., so as to improve the magnetoelectric coupling coefficient. , the effect of improving high-frequency performance and simplifying the structure

Inactive Publication Date: 2013-12-11
GRIREM ADVANCED MATERIALS CO LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, in the current thin-film magnetoelectric composite materials, in order to avoid the reaction between the ferromagnetic phase and the ferroelectric phase of the oxide system, Ni(Co, M)Fe is usually selected as the ferromagnetic phase. 2 o 4 、BiFeO 3 Oxide system, because the ferromagnetic phase has a lower magnetostriction, which ultimately affects the improvement of the material's magnetoelectric conversion coefficient

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  • Film magnetoelectric composite material and preparation method thereof
  • Film magnetoelectric composite material and preparation method thereof

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Embodiment 1

[0036] The preparation method of the magnetoelectric composite material of the present embodiment is: the composition is Pb[(Co 0.5 W 0.5 ) 0.2 Ti 0.45 Zr 0.35 ]O 3The piezoelectric ceramics were processed into thin slices with a size of 10×10×2.0 mm. After cleaning, Ag paste was brushed on both sides and fired to form conductive electrodes. The thickness of the electrodes was 100 μm, and the electrodes on both sides were welded with wires. Then, the piezoelectric substrate with the electrodes prepared is cleaned, and a layer of (Tb 0.2 Dy 0.8 )(Fe 0.80 co 0.10 mn 0.05 V 0.05 ) 1.80 The magnetostrictive film is annealed in situ at 450°C for 90min after the film is deposited. After the preparation of the material, the piezoelectric substrate was polarized along the thickness direction at 100° C. and a voltage of 3 kV / mm for 20 min. Then, under the conditions of a bias magnetic field of 500Oe, an alternating magnetic field of 1Oe, and an alternating magnetic field fr...

Embodiment 2

[0038] The preparation method of the magnetoelectric composite material of the present embodiment is: the composition is Pb[(Ba 0.5 Nb 0.5 ) 0.1 Ti 0. 45 Zr 0.45 ]O 3 The piezoelectric ceramics were processed into thin slices with a size of 10×10×0.2 mm. After cleaning, a layer of 0.001 μm Au conductive electrodes were sputtered on both sides, and wires were welded on both sides of the electrodes. Then, the piezoelectric substrate with the electrodes prepared is cleaned, and a layer of 0.01 μm thick (Tb 0.4 Dy 0.55 PR 0.05 )Fe 2.20 The magnetostrictive film was annealed in situ at 490°C for 10 minutes after the film was deposited. After the preparation of the material, the piezoelectric substrate was polarized along the thickness direction at 100° C. and a voltage of 3 kV / mm for 20 min. Then, under the conditions of a bias magnetic field of 500Oe, an alternating magnetic field of 1Oe, and an alternating magnetic field frequency of 1kHz, the magnetoelectric conversion...

Embodiment 3

[0040] The preparation method of the magnetoelectric composite material of the present embodiment is: the composition is Pb(Ti 0.35 Zr 0.65 )O 3 The piezoelectric ceramics were processed into thin slices with a size of 10×10×0.6 mm. After cleaning, a layer of 0.1 μm Pt conductive electrodes were sputtered on both sides by magnetron sputtering, and wires were welded to the electrodes on both sides. Then, the piezoelectric substrate with the electrode was cleaned, and a layer of 5.0 μm thick (Tb 0.3 Dy 0.68 Ho 0.02 )(Fe 0.90 Zn 0.02 Ti 0.03 Al 0.05 ) 1.98 The magnetostrictive film was annealed in situ at 490°C for 10 minutes after the film was deposited. After the preparation of the material, the piezoelectric substrate was polarized along the thickness direction at 100° C. and a voltage of 3 kV / mm for 20 min. Then, under the conditions of a bias magnetic field of 500Oe, an alternating magnetic field of 1Oe, and an alternating magnetic field frequency of 1kHz, the magn...

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Abstract

The invention relates to a film magnetoelectric composite material and a preparation method thereof, and belongs to the technical field of magnetic functional materials and preparation thereof. The magnetoelectric composite material is characterized by being prepared by compounding a magnetostrictive film layer, a conductive film layer and a piezoelectric ceramic substrate. In the preparation method, the magnetostrictive film layer is deposited on the piezoelectric substrate with a prepared electrode by physical vapor deposition (PVD) technology. The magnetoelectric composite material has high interfacial composite strength, a simple structure, a high magnetoelectric conversion coefficient, low high-frequency eddy current loss, stable performance and thin and light size, effectively avoids phase reaction between ferroelectric and ferromagnetic phases, and is particularly suitable for preparing a micro sensor; in addition, the preparation method is simple and feasible, and low in cost, and overcomes the defects of a complicated preparation process, high cost and the like of a laminated magnetoelectric composite material and the conventional film magnetoelectric composite material.

Description

technical field [0001] The invention relates to the technical field of magnetic functional materials and their preparation, and in particular provides a thin-film magnetoelectric composite material and a preparation method. Background technique [0002] Magnetoelectric composite material is a new type of functional material that combines ferroelectric phase and ferromagnetic phase through a certain method to form a magnetoelectric conversion effect. Compared with single-phase magnetoelectric materials (Cr 2 o 3 , GaFeO 3 , Y 3 Fe 3 o 12 etc.), which has many advantages such as high Neel and Curie temperature, large magnetoelectric conversion coefficient, etc., and is widely used in microwave, high-voltage power transmission, wide-band magnetic detection, magnetic field sensors and other fields, especially in microwave devices, high-voltage It has outstanding advantages in accurate measurement of electromagnetic leakage in power transmission system. [0003] The magnet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/16H01L41/22H10N30/01H10N30/093
Inventor 李扩社于敦波李红卫徐静张世荣
Owner GRIREM ADVANCED MATERIALS CO LTD
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