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Control of particles on semiconductor wafers when implanting boron hydrides

A borane and particle technology, applied in the field of particle contamination control systems, can solve problems such as a lot of time, reducing the output of the implanter, and reducing the efficiency of the ion implantation system.

Inactive Publication Date: 2011-05-04
AXCELIS TECHNOLOGIES
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

This type of etchant gas can remove some or all of the contaminants, but using an etchant gas typically requires a significant amount of time, not just to introduce the gas, but also to allow the etchant gas to react with the contaminants and The time to etch the contaminants, versus the time to remove the etchant gas from the ion implantation system once the etch is complete
The use of such etchant gases may thus reduce the efficiency of the ion implantation system 10, thereby reducing the throughput of the implanter

Method used

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  • Control of particles on semiconductor wafers when implanting boron hydrides
  • Control of particles on semiconductor wafers when implanting boron hydrides
  • Control of particles on semiconductor wafers when implanting boron hydrides

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Embodiment Construction

[0027] The present invention is generally directed to methods and apparatus for reducing particle contamination during ion implantation into one or more workpieces. More particularly, the method provides for introducing a non-etchant gas containing water vapor into an ion implantation system that can generate ions from the borane chemistry, wherein contaminants are typically converted from the ion implantation system rather than from the ion implantation system was removed. Accordingly, the invention will now be described in detail with reference to the accompanying drawings, wherein like reference numerals refer to like parts. It should be understood that the descriptions in these respects are illustrative only and should not be viewed in a limiting sense. In the ensuing description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the a...

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Abstract

A method for reducing particle contamination during implantation of ions comprises providing an implantation system (200) for implanting ions into a workpiece (228) via an ion beam (210), wherein one or more components are under selective vacuum and have one or more contaminants in a first state disposed thereon. A gas is introduced to the implantation system (at 200), wherein the gas generally reacts with at least a portion of the one or more contaminants, therein transforming the at least a portion of the one or more contaminants into a second state. The at least a portion of the one or more contaminants in the second state remain disposed on the one or more components, and wherein the at least a portion of the second state of the one or more contaminants generally does not produce particle contamination on the one or more workpieces.

Description

[0001] References to related applications [0002] This application claims priority and benefit to U.S. Provisional Patent Application No. 61 / 057485, filed May 30, 2008, entitled Particle Control on Semiconductor Substrates When Implanted with Borane, which is hereby incorporated by reference in its entirety . technical field [0003] The present invention relates to ion implantation systems, and more particularly, to systems and methods for controlling particle contamination in ion implantation systems. Background technique [0004] In the manufacture of semiconductor devices and other products, ion implantation systems are used to impart impurities, commonly known as dopant elements, that are added to semiconductor substrates, display panels, or other workpieces. A conventional ion implantation system or ion implanter treats a workpiece with an ion beam to create n-type or p-type doped regions, or to form a passivation layer in the workpiece. When used to dope semiconduc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01L21/265
CPCH01J37/3171H01J2237/022
Inventor 安迪·雷
Owner AXCELIS TECHNOLOGIES
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