Compact power module

A power module and compact technology, applied in the field of compact power modules, can solve the problems of low power density, large parasitic inductance of the internal power loop, and high height of the power module, so as to improve reliability, reduce parasitic inductance, reduce The effect of voltage overshoot

Active Publication Date: 2012-08-15
SHANGHAI DAOZHI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims to solve the problems of large internal power loop parasitic inductance and low power density caused by the high height of existing power modules

Method used

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Embodiment Construction

[0018] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0019] As shown in the figure, the present invention includes a copper heat dissipation substrate 5, a housing, and a circuit structure packaged in the housing. The casing includes a casing 3 and an outer cover 1 (or 11, or 14) covering the casing 3, and the circuit structure includes power terminals 4, signal terminals 2, insulating ceramic substrate 7, IGBT chips 9 (or 13), diode chip chips 6 (or 12). The insulating ceramic substrate 7 is welded on the copper heat dissipation substrate 5 by high-temperature reflow, and the insulating ceramic substrate 7 is welded with IGBT9 (or 13) and power diode 6 (or 12) chips, IGBT chip 9 (or 13), power diode 6 ( or 12) connect to the circuit structure etched on the insulating ceramic substrate 7, and connect the IGBT chip 9 (or 13) and the diode chip 6 (or 12) to each other through aluminum wires. At least thre...

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Abstract

The invention relates to a compact power module, which comprises a copper radiating substrate, a shell and a circuit structure packaged in the shell, wherein the shell comprises a shell and an outer cover laid on the shell; the circuit structure comprises a power terminal, a signal terminal, an insulated ceramic substrate, an insulated gate bipolar translator (IGBT) chip and a diode chip; the height of the shell is 15 to 18 millimeters, preferably 17 millimeters; and the part, exposed from the outer cover of the module, of power terminal is folded at a required angle.

Description

technical field [0001] The invention relates to a power module, in particular to a compact power module. Background technique [0002] Power semiconductor modules are mainly used in applications of electric energy conversion, such as: motor drive, power supply, power transmission and transformation, etc. Power semiconductor modules include: IGBT (insulated gate bipolar transistor), power MOSFET (field effect transistor), thyristor and power Diodes, etc., and the power semiconductor module is to package the above power semiconductor chips into various basic circuit units, which are applied to the power circuit of the power electronic system. At present, the most widely used IGBT package in the power electronics industry still adopts the package structure with a width of 34mm and 62mm. The circuit structure integrated in the module is mainly a half-bridge circuit, a chopper circuit, etc., but the module structure has a height of 30mm. The power density of the power module is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/00H01L23/04H01L23/48
CPCH01L2924/0002
Inventor 刘志宏姚礼军吕镇金晓行
Owner SHANGHAI DAOZHI TECH CO LTD
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