45results about How to "Reduce voltage overshoot" patented technology

A semiconductor thyristor device that incorporates buried region breakdown junctions laterally offset from an emitter region. By spacing the buried regions around the emitter region, current carriers emitted from the buried regions are distributed over a large area of the emitter region, thereby providing a high current capability during initial turn on of the device. In order to achieve low breakover voltage devices, the buried regions are characterized with high impurity concentrations, with the breakdown junctions located near the surface of the chip. The low voltage thyristor device minimizes the area of high dopant concentration junctions, thus minimizing the chip capacitance and permitting high speed, low voltage signal operation.

An apparatus includes an inverter including a high-side switch coupled to a low-side switch, the inverter generating a time-varying drive current from a plurality of drive control signals, a positive rail voltage, and a negative rail voltage wherein controlling the switches to generate the time-varying drive current produces a potential transitory overshoot condition for one of the switches of the inverter; a drive control, coupled to the inverter, to generate the drive control signals and to set a level of each of the rail voltages responsive to a plurality of controller signals; and a controller monitoring one or more parameters indicative of the potential transitory voltage overshoot condition, the controller dynamically adjusting, responsive to the monitored parameters, the controller signals to reduce a risk of occurrence of the potential transitory voltage overshoot condition.

An apparatus includes an inverter including a high-side switch coupled to a low-side switch, the inverter generating a time-varying drive current from a plurality of drive control signals, a positive rail voltage, and a negative rail voltage wherein controlling the switches to generate the time-varying drive current produces a potential transitory overshoot condition for one of the switches of the inverter; a drive control, coupled to the inverter, to generate the drive control signals and to set a level of each of the rail voltages responsive to a plurality of controller signals; and a controller monitoring one or more parameters indicative of the potential transitory voltage overshoot condition, the controller dynamically adjusting, responsive to the monitored parameters, the controller signals to reduce a risk of occurrence of the potential transitory voltage overshoot condition.

According to example embodiments, a substrate for a power module includes first to third parts spaced apart from each other, where the third part surrounds the first and second parts, and a conductive layer on the first to third parts. A terminal of a first polarity is connected to the first part, and a terminal of a second polarity is connected to the second part. The first and second terminals may be spaced apart from each other and each have a coupling part, a body, and a contact part. The bodies of the first and second terminals may overlap each other. A power module may include the substrate.

An apparatus includes an inverter including a high-side switch coupled to a low-side switch, the inverter generating a time-varying drive current from a plurality of drive control signals, a positive rail voltage, and a negative rail voltage wherein controlling the switches to generate the time-varying drive current produces a potential transitory overshoot condition for one of the switches of the inverter; a drive control, coupled to the inverter, to generate the drive control signals and to set a level of each of the rail voltages responsive to a plurality of controller signals; and a controller monitoring one or more parameters indicative of the potential transitory voltage overshoot condition, the controller dynamically adjusting, responsive to the monitored parameters, the controller signals to reduce a risk of occurrence of the potential transitory voltage overshoot condition.

The invention relates to a traction converter of a straddle type monorail train. The traction converter comprises a main circuit module and a control circuit, wherein the main circuit module is provided with a pre-charge circuit, an overvoltage protection circuit, an input filtering circuit and a traction inverter circuit module; the control circuit comprises a traction controller TCU (tape control unit), a current sensor and a voltage sensor; the traction controller TCU is respectively connected with the current sensor and the voltage sensor and used for collecting voltage, current and rotary speed signal to control the output of the traction inverter circuit and finish the voltage protection. Modularized design is adopted in the main circuit of the traction converter of the straddle type monorail train, so that the volume is small, and the weight is light, wherein an IGBT (insulated gate bipolar translator) power semiconductor technology is selected in the traction inverter circuit module, the high switching frequency control is allowed, and a composite laminated bus bar with stray inductance is adopted, so that the voltage overshoot produced by the stray inductance of the circuit under the higher di/dt action can be reduced while IGBT is cut off, the probability for damaging the IGBT is reduced, and the reliability of the system is high.

An apparatus includes an inverter including a high-side switch coupled to a low-side switch, the inverter generating a time-varying drive current from a plurality of drive control signals, a positive rail voltage, and a negative rail voltage wherein controlling the switches to generate the time-varying drive current produces a potential transitory overshoot condition for one of the switches of the inverter; a drive control, coupled to the inverter, to generate the drive control signals and to set a level of each of the rail voltages responsive to a plurality of controller signals; and a controller monitoring one or more parameters indicative of the potential transitory voltage overshoot condition, the controller dynamically adjusting, responsive to the monitored parameters, the controller signals to reduce a risk of occurrence of the potential transitory voltage overshoot condition.

A system and method for controlling a grid-connected reactive power compensation inverter. The system uses a combination of feedforward and feedback controls to compute a reference voltage signal based on sensor-measured voltages and currents, where the reference voltage signal is used to control the inverter switches. The disclosed method modifies a cross-couple feedforward signal used in the reference voltage calculations, where the modified cross-couple signal includes a combination of both reference and actual currents, and the modified control scheme reduces the DC-link voltage overshoot experienced during a capacitive overload event while still providing the required reactive power and maintaining grid system stability.

The reference voltage generator for a switch mode regulator includes: a reference voltage source; a soft-start voltage generator; and a comparator having a directional offset for comparing an output of the reference voltage source with an output of the soft-start voltage generator. Because of the intentional directional offset, the pass switch does not turn ON during the transition from the ramp voltage to reference voltage, therefore reducing energy stored in the inductor. Thus the voltage overshoot is reduced during the end of the soft-start cycle.

A switching circuit includes a semiconductor switch having a Gate terminal, and includes first, second, third, and fourth Gate resistors. The Gate resistors have upstream and downstream ends relative to a location of the semiconductor switch or a driven load. The downstream ends connect to the Gate terminal. First, second, third, and fourth buffer switches have Gate terminals and Source terminals, with the Source terminals connected to the upstream ends of the first, second, third, and fourth Gate resistors, respectively. An optional Gate driver integrated circuit (IC) connects to the Gate terminals of the buffer switches. A microcontroller, responsive to circuit measurements, selects switching control values and Gate resistor identities based on the measurements, and transmits switching control signals and a Gate resistor selection signal to select on/off states of the buffer switches and an optimum switching speed for the semiconductor switch.

The invention provides a test method for preventing high-voltage PAD burning, and the method comprises the steps: providing a tested chip and a test machine, enabling the tested chip to be provided with a charge pump and a welding pad, enabling the charge pump and the welding pad to be connected through a switch, enabling the welding pad to be connected with the test machine, applying a first voltage to the welding pad, and then opening the switch;starting the charge pump to output a second voltage; increasing the first voltage to a third voltage, wherein the third voltage is smaller than thesecond voltage; cutting off the third voltage on the welding pad to enable the voltage on the welding pad to rise from the third voltage to the second voltage; and testing the second voltage output bythe charge pump on the welding pad by using a testing machine. According to the invention, the voltage is applied to the welding pad in advance, and then slowly rises to reduce the voltage overshootgenerated during the high-voltage starting output of the charge pump, so that the risk that the test welding pad is damaged by the high-voltage overshoot is avoided, and the yield is improved.

A voltage generating unit generates a standard output voltage and sends to a voltage output side. A voltage detection unit detects a voltage of the voltage output side and informs a voltage gain control unit. When the voltage of the voltage output side is decreasing due to a dynamic load, the voltage gain control unit is configured to control the voltage generating unit to increase a gain of a voltage generated by the voltage generating unit, and the voltage generated by the voltage generating unit is lower than the standard output voltage. Then, the voltage gain control unit is configured to control the voltage generating unit to decrease the gain of the voltage generated by the voltage generating unit, and the voltage generated by the voltage generating unit is equal to the standard output voltage.

The invention discloses a multichip system capable of realizing reset and a control method of multichip reset. In the invention, all electrified chips sharing the same output power supply are triggered to reset by the different reset signals output by time division rather than the same reset signal, so that all the electrified chips for which the same output power source supplies power are not triggered to reset simultaneously, thus the rate of change of load current of the output power source is lower whenever the chips are reset, thereby decreasing the difference of two squares of instantaneous current changes when the electrified chips are reset, and reducing the voltage overshooting caused by the resets of the electrified chips.

An apparatus and system are provided to adjust an output voltage of an integrated circuit (IC) die. For instance, the apparatus can include an on-chip source termination and a bias generator. The bias generator can be configured to provide a source current to the on-chip source termination to adjust the output voltage. In particular, when adjusting the output voltage of the IC die, the bias generator can adjust the source current using a first current with a first adjustable current gain and a second current source with a second adjustable current gain.

The invention discloses a novel SiC MOSFET oscillation suppression circuit applied to a half-bridge circuit. The circuit is characterized in that a direct current bus is connected with a drain electrode of a second SiC MOSFET, one end of a second clamping capacitor and one end of a first feedback module, and a source electrode of the second SiC MOSFET is connected with a negative electrode of a second collection diode, a load end, a positive electrode of the first collection diode and a drain electrode of a first SiC MOSFET; the positive electrode of the second collection diode and the other end of the second clamping capacitor are connected with one end of the second feedback module, and the negative electrode of the first collection diode is connected with one end of the first clamping capacitor and the other end of the first feedback module; the low-voltage source is connected with the source electrode of the first SiC MOSFET, the other end of the second clamping capacitor and the other end of the second feedback module, overvoltage can be effectively suppressed by the circuit, and the clamping capacitor in the circuit can feed energy back to the direct current side through theinductance branch and participates in the circuit process only when overvoltage is generated.

The invention discloses a short-circuit-fault-resistant and explosion-suppression power device, and belongs to the technical field of power electronic devices. The power device comprises a direct current anode power terminal, a direct current cathode power terminal, two alternating current power terminals and a plurality of power semiconductor chips. The first commutation loop and the second commutation loop in the power device are decoupled in the device, so that a short-circuit fault current path comprises two alternating-current power terminals, the inductance of the short-circuit loop is increased, and the rise rate and the amplitude of the short-circuit current are inhibited. A fuse or a thermosensitive element is connected to the alternating-current power terminal, so that suppression of the rise rate and the amplitude of the short-circuit current is further realized. The configuration design does not affect the normal operation of the power device, can realize the collaborative optimization of the commutation loop inductance and the short-circuit endurance capability of the power device, and has the functions of autonomously suppressing the short-circuit fault current and preventing the device from explosion.

A semiconductor switching string including a series-connected switching assemblies. Each assembly has a main switching element including first and second connection terminals which current flows between when the main switching element is on. The main element has an auxiliary element between the connection terminals. The string includes a local control unit connected with each auxiliary element which are programmed to switch an auxiliary element to create an alternative current path between the connection terminals that diverts current through to reduce the voltage across the corresponding main switching element. The local unit is programmed to control switching an auxiliary element to a fully-on mode in which the auxiliary element is at maximum rated base current, a pulsed mode which turns the auxiliary element on and off and/or an active mode operating the auxiliary element with a continuously variable base current. The string includes a higher level control unit programmed to implement the modes.