The invention discloses a novel SiC
MOSFET oscillation suppression circuit applied to a half-
bridge circuit. The circuit is characterized in that a
direct current bus is connected with a drain
electrode of a second SiC
MOSFET, one end of a second clamping
capacitor and one end of a first feedback module, and a source
electrode of the second SiC
MOSFET is connected with a negative
electrode of a second collection
diode, a load end, a positive electrode of the first collection
diode and a drain electrode of a first SiC MOSFET; the positive electrode of the second collection
diode and the other end of the second clamping
capacitor are connected with one end of the second feedback module, and the negative electrode of the first collection diode is connected with one end of the first clamping
capacitor and the other end of the first feedback module; the low-
voltage source is connected with the source electrode of the first SiC MOSFET, the other end of the second clamping capacitor and the other end of the second feedback module,
overvoltage can be effectively suppressed by the circuit, and the clamping capacitor in the circuit can feed energy back to the
direct current side through theinductance
branch and participates in the circuit process only when
overvoltage is generated.