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High voltage devices and methods for forming the high voltage devices

A high-voltage, gate dielectric technology, applied in circuits, electrical components, transistors, etc., can solve problems such as high operating voltage

Active Publication Date: 2011-06-01
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, some components in electronic devices may require higher operating voltages than the above power supply voltages

Method used

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  • High voltage devices and methods for forming the high voltage devices
  • High voltage devices and methods for forming the high voltage devices
  • High voltage devices and methods for forming the high voltage devices

Examples

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Embodiment Construction

[0058] Generally, in traditional high-voltage metal-oxide-semiconductor (HV MOS) transistors, a specific isolation structure, such as shallow trench isolation (shallow trench isolation, STI) or regional silicon oxide structure (local Oxidation of silicon, LOCOS). In early electronic systems, in order to achieve the ideal breakdown voltage of the isolation structure buried under the gate of the high-voltage component, the thickness of the STI structure or LOCOS structure needs to be about several thousand angstroms.

[0059]A laterally diffused MOS (LDMOS) transistor is provided with a single-core oxide layer under the gate. In order to achieve the ideal breakdown voltage of the drain-source interface, the drain of the conventional LDMOS transistor must be far away from the junction of the high-voltage P-well and the high-voltage N-well. Based on the requirement for the separation distance between the drain and the junction, the chip size of the integrated circuit provided wit...

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Abstract

The invention discloses a high voltage device and a method for forming the high voltage device. The high voltage device includes a substrate, a gate dielectric structure, a gate, a metal layer and at least a source / drain. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is over a first well region of a first dopant type in the substrate. The second portion has a second thickness and is over a second well region of a second dopant type. The first thickness is larger than the second thickness. A gate electrode is disposed over the gate dielectric structure. A metallic layer is over and coupled with the gate electrode. The metallic layer extends along a direction of a channel under the gate dielectric structure. At least one source / drain (S / D) region is disposed within the first well region of the first dopant type.

Description

technical field [0001] The present invention relates to a semiconductor circuit, and more particularly to a high voltage device, system and method of forming the high voltage device. Background technique [0002] In the current consumer market, users desire to have various consumer electronic products that are thinner, more portable, and more affordable. In response to this demand, many electronic product manufacturers invest in R&D and production of low-power integrated circuits that can operate at lower power supply voltages. However, the operating voltage required by some components in the electronic device may be higher than the above-mentioned power supply voltage. For example, high voltage metal-oxide-semiconductor (HV MOS) transistors need to be provided in the liquid crystal display driving circuit to drive the pixel units of the liquid crystal display. Contents of the invention [0003] The object of the present invention is to provide a high voltage device and ...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/423H01L21/336
CPCH01L29/086H01L29/42368H01L29/402H01L29/7816H01L29/66689
Inventor 姚智文潘善仁柳瑞兴周学良蒋柏煜陈吉智段孝勤
Owner TAIWAN SEMICON MFG CO LTD
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