Corrosive solution composition, corrosion method and generated silicon wafer

Abstract

The invention discloses a corrosive solution composition, a corrosion method and a generated silicon wafer in order to solve the problem in the prior art that the product quality is influenced as a silicon dioxide layer is generated on the corroded surface of the corroded silicon wafer. The method disclosed by the invention comprises the following steps: physically grinding the surface to be corroded of the silicon wafer; and corroding the ground surface with a composition consisting of 48.5-49.5% hydrofluoric acid, 69-71% nitric acid and 99.3-100% acetic acid in a volume proportion of 1:5:5 so as to generate the corroded surface. As the ground surface is corroded by the composition, a silicon dioxide layer is prevented from being generated on the corroded surface, and the quality of the silicon wafer is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device production, and in particular relates to an etching solution composition, an etching method and a produced silicon wafer. Background technique [0002] In today's integrated circuits, the backside silicon etching process is used in the backside process of discrete devices. The specific process flow is as follows. Since the backside is thinned by physical grinding, the stress on the backside after thinning is relatively large, and the warpage is serious. For the risk of fragmentation, increasing the silicon etching process on the back side after thinning can eliminate the stress after thinning, so that the flatness of the wafer can meet the requirements, greatly reducing the risk of fragmentation, and improving the online survival rate of products. [0003] At present, the etching process used in the backside silicon etching process in the industry makes the backside of the wafer often...

AI Technical Summary

Problems solved by technology

[0003] At present, the etching process used in the backside silicon etching process in the industry makes the backside of the wafer often appear blackened and stained after the process is completed, that is, a silicon dioxide layer is formed on the etched surface of the wafer after silicon etching, which affects the quality of the product.

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