PNP bipolar transistor in SiGe BiCMOS technology

Abstract

The present invention discloses a PNP bipolar transistor in a SiGe BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) technology, an active region of the bipolar transistor is isolated by making use of shallow groove field oxide layers and comprises a collector region, a base region and an emitter region, wherein the collector region is formed by a P-type buried layer located at the bottom of the shallow groove, and led out by making a deep trap contact on the field oxide layers; the base region is formed by N-type ion implantation in the active region, peripheral sides of the base region are the shallow groove field oxide layers, width of the base region is equal to depth of the shallow groove, and the bottom of the base region is connected with the collector region; an N-type buried layer is formed at the bottom of the shallow groove located at the opposite side of the collector region, the base region is connected with the N-type buried layer and led out by making the deep trap contact on the field oxide layer on the N-type buried layer; and the emitter region is formed by a P-type ion implantation layer formed above the base region or by further providing a P-type polycrystalline silicon. The PNP bipolar transistor in the present invention can reduce area of the PNP transistor and raise current amplification factor of the PNP transistor.

Description

Technical field [0001] The invention relates to a semiconductor integrated circuit device, in particular to a PNP bipolar transistor in a SiGe BiCMOS process. Background technique [0002] In RF applications, higher and higher device characteristic frequencies are required. Although RFCMOS can achieve higher frequencies in advanced process technology, it is still difficult to fully meet the RF requirements. For example, it is difficult to achieve characteristic frequencies above 40GHz and advanced technology. The research and development cost of compound semiconductors is also very high; compound semiconductors can realize very high characteristic frequency devices, but due to the high material cost, small size, and most compound semiconductors are toxic, their applications are limited. SiGe HBT is a good choice for UHF devices. Firstly, it uses the energy band difference between SiGe and Si to improve the carrier injection efficiency in the emitter area and increase the current ...

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Problems solved by technology

like figure 1 As shown, it is a schematic diagram of the device structure of the existing PNP, which is a lateral structure and includes three active regions, which are in turn from left to right: base lead-out region (N-type Sinker), collector region and emitter region, which is It is determined that its area is difficult to shrink; its emitter region is a P-type epitaxial layer, and the base region is located under the P-type epitaxial layer, and passes through an N-type buried layer (Buried lay) and the base lead-out region (N-type Sinker) is connected to lead out, the collector region is connected to the N-type buried layer of the base region, the base region is L-shaped, and its width is the depth of the trench and the lateral distance between the two active regions of the collector and emitter And, there is a longer base width, which makes it difficult to improve the current amplification factor of PNP

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