N-type super-junction transverse double-diffusion metal oxide semiconductor tube

Abstract

The invention discloses an N-type super-junction transverse double-diffusion metal oxide semiconductor tube, which comprises a P-type substrate, wherein the P-type substrate is provided with a super-junction structure and a P-type body region; the super-junction structure consists of an N-type epitaxial layer and a P-type semiconductor region embedded therein; the P-type body region is provided with an N-type source region, a P-type body contact region and a grid oxide layer; the super-junction structure is provided with an N-type drain region; a first type field oxide layer is arranged above the super-junction structure and positioned in a region beyond the N-type drain region; a polycrystalline silicon grid is arranged above the grid oxide layer and extends to the upper part of the first type field oxide layer from the upper part of the grid oxide layer; a second type field oxide layer is arranged above the N-type source region, the P-type body contact region, the N-type drain region, the polycrystalline silicon grid and the first type field oxide layer; the N-type source region, the N-type drain region, the P-type body contact region and the polycrystalline silicon grid are all connected with a source metal lead, a grid metal lead and a drain metal lead; and the depth of the P-type semiconductor region in the super-junction structure is linearly reduced in the direction from the N-type source region to the N-type drain region.

Description

technical field [0001] The invention relates to a high-voltage power metal oxide semiconductor device made of silicon, more precisely, a high-voltage N-type superjunction lateral double-diffused metal oxide semiconductor transistor made of silicon. Background technique [0002] At present, power devices are more and more widely used in daily life, production and other fields, especially power metal oxide semiconductor field effect transistors, because they have faster switching speed, smaller drive current, and wider safe operating area , so it has been favored by many researchers. The power devices integrated in power integrated circuits mainly include lateral insulated gate bipolar transistors and lateral double-diffused semiconductor metal oxide transistors. Although the current driving capability of lateral insulated gate bipolar transistors is relatively strong, the speed of power integrated circuits using lateral insulated gate bipolar transistors is limited due to th...

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Problems solved by technology

However, the added N-type buried layer in this structure will assist in depleting the P-type pillars, which still causes a charge imbalance between the P-type and N-type pillars

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