Manganese oxide thin film with adjustable charge-orbital ordering characteristic

A manganese oxide and track-ordered technology, which is applied in the preparation of manganese oxide thin films and the field of oriented manganese oxide thin films, can solve the problems of unfavorable practical applications, achieve low power consumption, good repeatability, and benefit device applications Effect

Active Publication Date: 2011-06-22
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in order to meet the requirements of no damage and reversibility, currently the main method is to use an external high magnetic field, which is very unfavorable for practical applications.

Method used

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  • Manganese oxide thin film with adjustable charge-orbital ordering characteristic
  • Manganese oxide thin film with adjustable charge-orbital ordering characteristic
  • Manganese oxide thin film with adjustable charge-orbital ordering characteristic

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0050] PMN-PT(0.7Pb(Mg 1 / 3 Nb 2 / 3 )O 3 -0.3PbTiO 3 ) growth of 10nm thick La on the substrate 7 / 8 Sr 1 / 8 MnO 3 The thin film obtains orderly transformation of charge orbit, and adjusts order phase of charge orbit and magnetoresistance effect by applying a bias electric field.

[0051] In order to fully illustrate the induction effect of large tensile strain on the ordered transformation of charge orbits, the examples of the present invention also give the (001)-oriented SrTiO 3 10nm La deposited on a single crystal substrate 7 / 8 Sr 1 / 8 MnO 3 (LSMO) thin film measurement results, La 7 / 8 Sr 1 / 8 MnO 3 with SrTiO 3 The lattice mismatch between is ~0.2%. To ensure the same experimental conditions, SrTiO 3 and PMN-PT substrates were fixed on the adjacent area on the heating plate, and the same thickness of La was grown in the same deposition experiment 7 / 8 Sr 1 / 8 MnO 3 film.

[0052] 1) The rare earth oxide La 2 o 3 , alkaline earth metal carbonate SrCO 3 and MnC...

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Abstract

The invention discloses a new method for realizing adjustable charge-orbital ordering characteristic in a (001) oriented perovskite manganese oxide thin film and use thereof. In the method, (001) oriented lead magnesium niobate-lead titanate (PMN-PT) with high reverse piezoelectric performance is used as a substrate, the lattice mismatch of the substrate and the perovskite manganese oxide is controlled to be 1 to 3 percent to ensure that the thin film has a large in-plane tensile strain during epitaxial growth, and thus, the charge-orbital ordered transformation is induced. The chemical general formula of the thin film is Re1-xAexMnO3, wherein x ranges from 0 to 1; Re is one or more than two of La, Ce, Pr, Eu, Ho, Nd and Sm; and Ae is one or more than two of Ca, Sr, Ba, Ce, Sn, Y and Hf. Furthermore, the state of the charge-orbital ordered phase in the thin film can be adjusted by applying a bias electric field onto the substrate, and thus, the magnetoresistance of the thin film can be controlled.

Description

technical field [0001] The invention relates to a (001) oriented manganese oxide thin film with adjustable charge track ordering properties. [0002] The present invention also relates to a preparation method of the above-mentioned manganese oxide thin film with adjustable charge track ordering characteristics. [0003] The present invention also relates to the application of the above-mentioned manganese oxide thin film with adjustable charge track ordering characteristics. Background technique [0004] To facilitate understanding of the present invention, some terms are defined below. The terms defined in the present invention have meanings commonly understood by those of ordinary skill in the fields related to the present invention. [0005] Unless otherwise stated, the term "charge orbital order" used in the present invention refers to the periodic arrangement of different charged cations and different orbital occupation states of electrons in a material at specific la...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50C23C14/28C23C14/08C23C14/58
Inventor 王晶胡凤霞孙继荣沈保根
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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