Chemical mechanical polishing solution

Abstract

The invention discloses chemical mechanical polishing solution, which contains abrasive grains, a corrosion inhibitor, an oxidant, water and at least two complexing agents. The chemical mechanical polishing solution also can keep higher copper removing rate after polishing pad cleaning solution is used.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. VLSI wiring is being transformed from traditional Al to Cu. Compared with Al, Cu wiring has low resistivity, high electromigration resistance, and short RC delay time. The advantages of Cu wiring have made it replace Al as an interconnect metal in semiconductor manufacturing. [0003] However, there is no known technology for effectively plasma etching or wet etching copper material to fully form copper interconnections in integrated circuits, so chemical mechanical polishing of copper is co...

AI Technical Summary

Problems solved by technology

However, during the polishing process of copper, due to the removal of copper, it often remains on the polishing pad and affects the polishing performance. Therefore, it is necessary to use an acidic polishing pad cleaning solution to remove the copper residue after polishing.

However, polishing slurries, especially those with a higher pH value, are often incompatible with polishing pad cleaning solutions, resulting in reduced copper removal rates after using cleaning solutions

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