Manufacturing method of ultraviolet LED (light-emitting diode)

A manufacturing method and ultraviolet technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low output power of ultraviolet LEDs

Inactive Publication Date: 2011-08-10
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0009] The object of the present invention is to provide a method for making ultraviolet LEDs, which can solve the problem of low output power of ultraviolet LEDs in the method of using ultraviolet light to laser RGB phosphors to produce white light in white light solid-state lighting

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  • Manufacturing method of ultraviolet LED (light-emitting diode)
  • Manufacturing method of ultraviolet LED (light-emitting diode)
  • Manufacturing method of ultraviolet LED (light-emitting diode)

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[0032] see again figure 1 and figure 2 , the invention provides a kind of manufacture method of ultraviolet LED, comprises the following steps:

[0033] Step 1: Take a sapphire substrate 1;

[0034] Step 2: growing a nucleation layer 2 and an n-type layer 3 sequentially on the substrate 1, the nucleation layer 2 is low-temperature GaN, its growth temperature is 550°C, and the thickness is 30nm; the n-type layer 3 is high-temperature GaN layer, the growth temperature is 1050°C, and the thickness is 1.5μm;

[0035] Step 3: growing a multi-quantum well layer 4 on the n-type layer 3, the multi-quantum well layer 4 is AlInN / GaN, the thickness of the well layer is 3.0nm, the thickness of the barrier layer is 12.0nm, and the number of periods is 5;

[0036] Step 4: growing an electron blocking layer 5 and a p-type layer 6 on the multi-quantum well layer 4 respectively, the electron blocking layer 5 is an AlInN layer, its doping type is p-type, the growth temperature is 800°C, and...

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Abstract

The invention provides a manufacturing method of an ultraviolet LED (light-emitting diode), which comprises the following steps of: 1, taking a substrate; 2, sequentially growing a nucleating layer and an n-type layer on the substrate; 3, growing a multi-quantum well layer on the n-type layer; and 4, growing an electronic barrier layer and a p-type layer on the multi-quantum well layer to complete the structure growth. The method solves the problem of low output power of the ultraviolet LED through the traditional method of generating white light by ultraviolet lasing RGB (red, green and blue) fluorescent powder in white light solid-state illumination.

Description

technical field [0001] The invention belongs to the field of nitride-based material growth and device manufacturing, in particular to a method for manufacturing an ultraviolet LED that can improve the output power of the ultraviolet LED. Background technique [0002] White solid-state lighting light-emitting diodes (LEDs) are considered the third generation of lighting sources after incandescent and fluorescent lamps. Compared with traditional light sources, all-solid-state semiconductor lighting sources have a series of advantages such as high luminous efficiency, long life, small size, fast response, shock resistance, and safe use. It is a green lighting source that is environmentally friendly and energy-saving. . [0003] At present, there are mainly three ways to realize white light solid-state lighting, and the most used one is blue LED+YAG phosphor powder. There are relatively large changes. The second is to use ultraviolet LEDs to laser RGB phosphors to produce whi...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/32H01L33/06H01L33/14
Inventor 贠利君吴奎刘乃鑫刘喆王军喜
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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