Method for determining illumination intensity distribution of light source and mask pattern of photo-etching process

A technology of light intensity and photolithography technology, which is applied in the field of integrated circuit manufacturing, can solve the problems of long calculation time and unsatisfactory effect, and achieve the effects of shortened calculation time, good effect and good optimization effect

Inactive Publication Date: 2011-08-31
TSINGHUA UNIV
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Method (8), the calculation takes a l

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  • Method for determining illumination intensity distribution of light source and mask pattern of photo-etching process
  • Method for determining illumination intensity distribution of light source and mask pattern of photo-etching process
  • Method for determining illumination intensity distribution of light source and mask pattern of photo-etching process

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[0046] The embodiments of the present invention will be described in detail below in conjunction with the drawings.

[0047] figure 1 It is a flow chart of the method for optimizing the light source of the photolithography process of the present invention. Such as figure 1 As shown, the method for determining the light intensity distribution of the light source in the lithography process of the present invention includes the following steps:

[0048] (1) Use the matrix Γ to represent the initial light intensity distribution of the determined light source;

[0049] According to the traditional light sources used in the lithography process in the current integrated circuit manufacturing, such as circular and annular light sources, determine the initial light intensity distribution of a light source, and use a matrix Γ to represent the light source. Each element in the matrix Γ is respectively Corresponding to a pixel at a corresponding position in the light source, the element value o...

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Abstract

The invention relates to a method for determining the illumination intensity distribution of a light source and a mask pattern of a photo-etching process and belongs to the technical field of manufacturing of an integrated circuit. The method comprises the following steps of: determining the initial shape and initial illumination intensity of the light source, and representing the initial shape and the initial illumination intensity by matrixes; determining an initial pattern of a mask, and representing the initial pattern of the mask by a pixel matrix; adding two compensation items and establishing a target function by using imaging accuracy and focal depth in photo-etching process as a basic optimization target; calculating and normalizing the illumination intensity distribution after the mask pattern is subjected to action of a photo-etching system; repeating the calculation step until a condition of convergence is met; obtaining a light source matrix and calculating an imaging nucleus of the photo-etching system and coefficients of the imaging nucleus; calculating an illumination intensity distribution matrix; calculating a pattern which is etched on a silicon wafer and representing the pattern by the matrix; calculating the gradient of the target function on the matrix; updating the matrix; and repeating the calculation step until the condition of convergence is met. The method for optimizing the light source and the mask of the photo-etching process has the advantages of short time and good optimization effect.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing, and relates to a method for determining the light intensity distribution of a light source in a photolithography process and a mask pattern, which is used to improve the imaging accuracy and depth of focus of photolithography, and in particular to a method using a computer Simulation technology is a method to determine the intensity distribution of the light source and the pattern of the mask plate in the lithography process. Background technique [0002] The photolithography process is one of the most important process steps in the manufacture of integrated circuits. Its main function is to copy the pattern on the mask plate to the silicon wafer to prepare for the next etching or ion implantation process. The cost of photolithography is about 40% of the entire silicon wafer manufacturing process, and the time consumption accounts for about 40-60% of the entire silicon wa...

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Application Information

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IPC IPC(8): G03F7/20G03F1/14
Inventor 张进宇彭瑶王燕余志平
Owner TSINGHUA UNIV
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