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Microstructure for measuring bonding strength of silicon slice and manufacturing method of microstructure

A technology of bonding strength and microstructure, applied in measurement devices, instruments, mechanical devices, etc., can solve the problems of inflexible and convenient measurement methods, destructive detection methods, large reading errors, etc., and is conducive to process monitoring, Simple method, convenient operation effect

Inactive Publication Date: 2011-09-07
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The Czochralski method is widely used in the bond strength measurement of the bonding sheet, which is expressed by the maximum pulling force of the bonding sheet. Inflexible, convenient, and a destructive detection method
The crack propagation method, also known as the blade method, uses a blade to insert along the bonding interface and observe the fracture depth to reflect the bonding strength. Although this method is simple and has little damage to the bonding sheet, it is difficult to operate due to the brittleness of the silicon chip. And the reading error is large

Method used

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  • Microstructure for measuring bonding strength of silicon slice and manufacturing method of microstructure
  • Microstructure for measuring bonding strength of silicon slice and manufacturing method of microstructure
  • Microstructure for measuring bonding strength of silicon slice and manufacturing method of microstructure

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Embodiment 1

[0019] Embodiment 1: A microstructure for measuring the bonding strength of a silicon wafer, comprising a substrate silicon wafer 1 and a structural silicon wafer 2, on one side of the structural silicon wafer 2 a bonding region 3 and a support point 4 are arranged, and on the other side A force point 5 is provided, and the support point 4 is set between the bonding area 3 and the line connecting the force point 5; the substrate silicon wafer 1 and the structural silicon wafer 2 are bonded into one body through the bonding area 3. The supporting points 4 are bumps arranged on the structural silicon wafer 2, and the bumps are not in contact with the substrate silicon wafer 1 and have a distance less than 1 micron.

Embodiment 2

[0020] Embodiment 2: A kind of microstructure for measuring the bonding strength of silicon wafers, comprising a substrate silicon wafer 1 and a structural silicon wafer 2, a bonding area 3 and two support points 4 are arranged on one side of the structural silicon wafer 2, and the other One side is provided with two force points 5, and the support points are arranged between the bonding area and the force points; the two support points and the two force points are symmetrically arranged on both sides of the bond area 3, and the support points On the connection line between the force point on the same side and the bonding area (3); the substrate silicon wafer 1 and the structural silicon wafer 2 are bonded into one body through the bonding area 3 . The support point is a bump set on the structural silicon wafer, and the bump has a contact area with the substrate silicon wafer 1 with a width less than 2 microns. The substrate silicon wafer 1 may be directly connected to the str...

Embodiment 3

[0021] Embodiment 3: the method for making this microstructure, comprises the following steps: step 1, oxidizes the surface of structure silicon wafer 2, forms SiO 2 Corrosion barrier layer, determine the parts where the bonding region 3 and the support point 4 will be formed, and then photoetch the corrosion barrier layer of the above two parts to form a corrosion window between the two parts, and then use tetramethyl ammonium hydroxide solution to pass through the corrosion window The structural silicon wafer 2 is etched to a depth of 2 microns. Corresponding to the etching depth, according to the anisotropic etching characteristics of silicon, the width of the design support point is 1.414 times of the depth, that is, about 3 microns in width, so that the support point is formed at the same time when the etching depth reaches; step 2, the substrate silicon wafer 1 and the structural silicon wafer 2 are bonded together through a silicon direct bonding process, specifically, ...

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Abstract

The invention relates to a microstructure for measuring the bonding strength of a silicon slice and a manufacturing method of the microstructure. The microstructure comprises a substrate silicon slice and a structural silicon slice, wherein one surface of the structural silicon slice is provided with a bonding area and a supporting point, and the other surface of the structural silicon slice is provided with a boosting point; the supporting point is arranged between the bonding area and the boosting point; and the substrate silicon slice is bonded with the structural silicon slice into a whole through the bonding area. The manufacturing method of the microstructure comprises the following steps of: 1, oxidizing the surface of the structural silicon slice to form a corrosion barrier layer,then carrying out photoetching on the corrosion barrier layer to form a corrosion window, and then corroding the structural silicon slice at the depth of 2-200 micrometers by using corrosive liquid; and 2, bonding the substrate silicon slice and the structural silicon slice into a whole through a silicon direct bonding process. The microstructure has the advantages of simple structure, flexibility of arrangement and convenience for operation.

Description

technical field [0001] The invention relates to a microstructure and a manufacturing method thereof, in particular to a microstructure for measuring the bonding strength of a silicon wafer and a manufacturing method thereof. Background technique [0002] Bonding technology refers to bonding two polished silicon wafers together after chemical cleaning, and then undergoing high-temperature annealing treatment, physical and chemical reactions occur at the interface to form a chemical bond connection. This silicon chip direct bonding technology has now become an important means of preparing composite materials and realizing micromachining. [0003] In bonding technology, bonding strength is a very important parameter, and it is an important technical indicator related to the quality of bonding. In industrial applications, many devices require sufficient bonding strength. If the bonding strength is small, the bonding sheet is likely to crack during processing, resulting in failu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N19/04
Inventor 秦明康兴华胡尔同
Owner SOUTHEAST UNIV