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Microstructure for measuring bonding strength of silicon slice and manufacturing method of microstructure

A technology of bonding strength and microstructure, applied in measurement devices, instruments, mechanical devices, etc., can solve the problems of inflexible and convenient measurement methods, destructive detection methods, large reading errors, etc., and is conducive to process monitoring, Simple method, convenient operation effect

Inactive Publication Date: 2012-12-19
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The Czochralski method is widely used in the bond strength measurement of the bonding sheet, which is expressed by the maximum pulling force of the bonding sheet. Inflexible, convenient, and a destructive detection method
The crack propagation method, also known as the blade method, uses a blade to insert along the bonding interface and observe the fracture depth to reflect the bonding strength. Although this method is simple and has little damage to the bonding sheet, it is difficult to operate due to the brittleness of the silicon chip. And the reading error is large

Method used

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  • Microstructure for measuring bonding strength of silicon slice and manufacturing method of microstructure
  • Microstructure for measuring bonding strength of silicon slice and manufacturing method of microstructure

Examples

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Effect test

Embodiment 1

[0019] Example 1: A microstructure for measuring the bonding strength of silicon wafers, comprising a substrate silicon wafer 1 and a structural silicon wafer 2. A bonding area 3 and a support point 4 are provided on one side of the structural silicon wafer 2, and on the other side A force point 5 is provided, and the support point 4 is arranged between the bonding area 3 and the connection line of the force point 5 ; the substrate silicon wafer 1 and the structural silicon wafer 2 are bonded together through the bonding area 3 . The support points 4 are bumps disposed on the structural silicon wafer 2 , and the bumps are not in contact with the substrate silicon wafer 1 and have a distance of less than 1 μm.

Embodiment 2

[0020] Example 2: A microstructure for measuring the bonding strength of silicon wafers, comprising a substrate silicon wafer 1 and a structural silicon wafer 2, on one side of the structural silicon wafer 2, a bonding area 3, two support points 4 are provided, and the other One side is provided with two force points 5, and the support points are arranged between the bonding area and the force point; the two support points and the two force points are symmetrically arranged on both sides of the bonding area 3, and the support points On the connection line between the force point on the same side and the bonding region (3); the substrate silicon wafer 1 and the structural silicon wafer 2 are bonded together through the bonding region 3. The support points are bumps disposed on the structural silicon wafer, and the bumps and the substrate silicon wafer 1 have a contact area with a width of less than 2 microns. The substrate silicon wafer 1 may be directly connected to the struct...

Embodiment 3

[0021] Embodiment 3: The method for manufacturing this microstructure includes the following steps: Step 1, oxidizing the surface of the structured silicon wafer 2 to form SiO 2 Corrosion barrier layer, determine the parts where bonding area 3 and support point 4 will be formed, then photoetch the corrosion barrier layer of the above two parts, form an etching window between the two parts, and then use tetramethyl hydroxide ammonia solution to pass through the etching window The structural silicon wafer 2 is etched to a depth of 2 microns. Corresponding to the etching depth, according to the anisotropic etching characteristics of silicon, the design support point width is 1.414 times the depth, that is, about 3 microns in width, so that the support point will be formed at the same time when the etching depth is reached; step 2, the substrate silicon wafer 1 It is bonded with the structural silicon wafer 2 through a silicon direct bonding process, specifically, chemically clean...

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Abstract

The invention relates to a microstructure for measuring the bonding strength of a silicon slice and a manufacturing method of the microstructure. The microstructure comprises a substrate silicon slice and a structural silicon slice, wherein one surface of the structural silicon slice is provided with a bonding area and a supporting point, and the other surface of the structural silicon slice is provided with a boosting point; the supporting point is arranged between the bonding area and the boosting point; and the substrate silicon slice is bonded with the structural silicon slice into a whole through the bonding area. The manufacturing method of the microstructure comprises the following steps of: 1, oxidizing the surface of the structural silicon slice to form a corrosion barrier layer,then carrying out photoetching on the corrosion barrier layer to form a corrosion window, and then corroding the structural silicon slice at the depth of 2-200 micrometers by using corrosive liquid; and 2, bonding the substrate silicon slice and the structural silicon slice into a whole through a silicon direct bonding process. The microstructure has the advantages of simple structure, flexibility of arrangement and convenience for operation.

Description

technical field [0001] The invention relates to a microstructure and a manufacturing method thereof, in particular to a microstructure for measuring the bonding strength of silicon wafers and a manufacturing method thereof. Background technique [0002] Bonding technology refers to the bonding of two polished silicon wafers after chemical cleaning, and then after high temperature annealing treatment, physical and chemical reactions occur at the interface to form a chemical bond connection. This silicon wafer direct bonding technology has now become an important means of preparing composite materials and realizing micromachining. [0003] In bonding technology, bonding strength is a very important parameter, and it is an important technical index related to the quality of bonding. In industrial applications, many devices require sufficient bonding strength. The bonding strength is small, and the bonding sheet is likely to crack during processing, resulting in failure; the bo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N19/04
Inventor 秦明康兴华胡尔同
Owner SOUTHEAST UNIV