Electrodes for high pressure in situ resistivity survey and manufacturing method of electrodes

An in-situ resistance and electrode technology, applied in the field of high-voltage devices, can solve problems such as measurement errors

Inactive Publication Date: 2011-09-14
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the deficiencies of the background technology, design a new type of diamond anvil electrode, realize the measurement of in-situ resistivity under high pressure conditions, and solve the problem of the measurement of sample thickness and the incomplete insulation of the inner wall of the sample cavity. Problems that cause measurement errors

Method used

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  • Electrodes for high pressure in situ resistivity survey and manufacturing method of electrodes
  • Electrodes for high pressure in situ resistivity survey and manufacturing method of electrodes
  • Electrodes for high pressure in situ resistivity survey and manufacturing method of electrodes

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Embodiment 1

[0022] Embodiment 1 illustrates the electrode structure of the present invention in conjunction with the accompanying drawings

[0023] exist figure 1 , 2 , 3, 1 is a diamond anvil, 3 is an electrode, 4 is an insulating protective layer, 5 is a metal lead, and 6 is a metal gasket.

[0024] See figure 2 , the two electrodes 3 extend from the anvil surface of the diamond anvil 1 to the side respectively; the ends of the two electrodes 3 on the anvil surface of the diamond anvil 1 are respectively circular and arcuate, and the arcuate ends surround two sides of the circular end The ends of the strip electrode 3 on the anvil surface of the diamond anvil 1 are circular and arcuate respectively, and the arcuate end surrounds the outside of the circular end. The molybdenum electrode formed by the inventor on the anvil surface of diamond anvil 1 with a radius of about 150 μm is divided into two parts, one is the round electrode at the end, and the radius of the round electrode is ...

Embodiment 2

[0027] Embodiment 2 illustrates the fabrication process of the electrode of the present invention in conjunction with the accompanying drawings

[0028] The present invention utilizes thin film deposition technology and photolithography to integrate metal microcircuits on the anvil surface of diamond, and the whole process of making electrode 3 can be found in Figure 4 , completed by the following technological means:

[0029] (1) First put the diamond anvil 1 into the acid solution (the ratio of sulfuric acid to nitric acid is 1:1) and cook for 20 to 30 minutes to remove the stains attached to the diamond surface, and then rinse off the remaining stains on the surface of the anvil with deionized water. acid. Figure 4 The cleaned diamond counter-anvil is shown in the upper left part of the center.

[0030] (2) After the diamond anvil 1 is dried, it is put into the vacuum chamber of the magnetron sputtering device, and metal molybdenum is deposited on the diamond surface by...

Embodiment 3

[0037] The selection of embodiment 3 electrode shape:

[0038] According to the Laplace equation of the electrostatic field:

[0039] Laplace's equation for cylindrical coordinates: and is U 1 , U 2 , U 3 , function of r, θ, z, R, d. which is where U 1 , U 2 , U 3 , R, d are boundary conditions.

[0040] let r=r 0 =(RE 2+R) / 2, where RF2 is a constant, and r can be represented by R.

[0041] According to electromagnetic theory:

[0042]

[0043] That is, σ=Ψ(U 1 , U 2 , U 3 , I, R, d)

[0044] If U 1 , U 2 , U 3 , I takes a fixed value, then

[0045] σ a =Ψ a (R,d)

[0046] σ b =Ψ b (R,d)

[0047] σ c =Ψ c (R,d)

[0048] According to the above mathematical derivation, in the cylindrical coordinate system, it can be seen that the resistivity is related to the radius of the electrode. Therefore, the electrodes are designed in circular and arcuate shapes. Using the Vb programming tool, the calculation program is written, and the measured da...

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Abstract

The invention relates to electrodes for a high pressure in situ resistivity survey and a manufacturing method of the electrodes and belongs to the field of high pressure apparatus technology. Two electrodes (3) are deposited on a diamond anvil cell (1), an insulation protection layer (4) is redeposited on an anvil face and a side face of the diamond anvil cell (1), and metal leads (5) of the electrodes are adhered to electrode terminals exposed barely on the side face of the diamond anvil cell (1); the terminals of the two electrodes (3) on the anvil face of the diamond anvil cell (1) are circular and arched in shape respectively; and a metallic gasket (6) disposed between two diamond anvil cells (1) serves as the third electrode. The manufacturing method of the electrodes (3) comprises the steps of depositing metal molybdenum, manufacturing electrodes, depositing the aluminium oxide insulation protection layer and manufacturing the electrode leads. By employing the electrodes, the resistivity survey is free from experimental errors caused by uninsulated cavity inner walls of samples, and requires no measurement of thicknesses of the samples, thereby being free from the experimental errors caused by inaccurate thickness measurement.

Description

Technical field: [0001] The invention belongs to the technical field of high-voltage devices, in particular to a novel electrode made on the surface of a diamond counter-anvil for high-voltage in-situ resistivity measurement. Background technique: [0002] The device commonly used in the world to generate ultra-high pressure is the diamond counter-anvil (DAC), and the in-situ measurement technology under high pressure is realized on the diamond counter-anvil. Its development has enabled people to further deepen the research on physical properties, such as high-pressure synchrotron radiation, Raman spectroscopy, optics and other research fields have been greatly developed. Due to the influence of electrodes, the development of high-voltage electrical measurement using DAC was slow. It was not until Han Yonghao et al. reported the integration of electrodes on DAC in the patent publication number: CN 1396801A that the development of high-voltage electrical was accelerated. On t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R27/02
Inventor 高春晓任万彬彭刚刘才龙韩永昊刘鲍胡廷静吴宝嘉王庆林邹广田
Owner JILIN UNIV
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