Method for Improving Reliability of Trench Gate Top Corner Oxygen
A trench gate, reliability technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of uneven gate oxide thickness, poor reliability, etc., and achieve the effect of improving reliability
Active Publication Date: 2016-03-02
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
[0006] The present invention aims to provide a method for improving the reliability of the top corner gate oxide of the trench gate aiming at defects such as uneven thickness and poor reliability of the existing trench gate top corner gate oxide in the prior art
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[0023] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.
[0024] see figure 1 , figure 1 Shown is a flow chart of a method for improving the reliability of a top corner gate oxide of a trench gate. The method for improving the reliability of the top corner gate oxide of the trench gate includes:
[0025] Step S1 is executed: providing a first semiconductor substrate 10 . like figure 2 As shown, the first semiconductor substrate 10 is a silicon-based substrate.
[0026] Step S2 is performed: depositing and forming a hard mask layer 11 . read on figure 2 , the hard mask layer 11 further includes an oxide layer 111 deposited and formed on the surface of the first semiconductor substrate 10 and nitrogen deposited and formed on the side of the oxide layer 111 different from the first semic...
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The invention provides a method for improving the reliability of apex gate oxide of a trench gate, comprising the following steps: providing a semiconductor substrate; preparing a hard mask, wherein the hard mask is provided with a nitride layer, and an oxide layer is formed between the nitride layer and the semiconductor layer; preparing a trench: on the basis of utilizing the hard mask as a mask, etching the semiconductor substrate so as to form the trench; preparing a gap: etching the oxide layer between the semiconductor substrate and the nitride layer so as to form the gap on the outer edge of the top of the trench; preparing a sacrificial oxide so as to form a slope structure at the apex of the trench gate; and growing a gate oxide, and padding polycrystalline silicon. In the invention, the hard mask with the hard nitride film is adopted as a mask for etching of the trench, and the gap is formed on the outer edge of the top of the trench, so that a trench gate apex with the slope structure is formed through a low-temperature wet type oxidization method, and the reliability of the apex gate oxide of the first trench gate can be improved.
Description
technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a method for improving the reliability of the gate oxygen at the top corner of a trench gate. Background technique [0002] The gate, source and drain of traditional metal oxide semiconductor (MOS) transistors are located on the same level, and the surface gate structure has the problems of large on-state resistance and high power consumption, which cannot well meet the needs of power devices. . In order to meet the needs of high-power transistors, trench-gate MOS devices emerged as the times require. Trench gate MOS devices not only inherit the advantages of high input impedance and low drive current of horizontal channel MOS transistors, but also have the advantages of high voltage resistance, large operating current, high output power, and fast switching speed. In the manufacturing process of the trench gate MOS device, the manufacture of the trench gate is...
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IPC IPC(8): H01L21/336H01L21/28
Inventor 沈思杰楼颖颖
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP