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Super high-density perpendicular magnetic recording magnetic film and preparation method thereof

A perpendicular magnetic recording, ultra-high density technology, applied in the direction of magnetic recording, only a part of the coating supported by a magnetic layer, data recording, etc., can solve the problem of strict control of deposition conditions and equipment requirements, unfavorable operation by ordinary technicians, unfavorable Problems such as mass production, to achieve the effect of easy operation, good chemical stability and easy operation in the production process

Active Publication Date: 2011-09-21
NANTONG WANBAO IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the production cost of these preparation methods is high, the deposition condition control and equipment requirements are strict, and the orientation strength in the vertical direction is not high, which is not conducive to the operation of ordinary technicians in industrial production, so it is not conducive to mass production.

Method used

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  • Super high-density perpendicular magnetic recording magnetic film and preparation method thereof

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Effect test

Embodiment 1

[0024] (1) Clean the single crystal silicon wafer: use hydrofluoric acid with a concentration of 5% to remove the oxide layer on the surface, and then use a volume ratio of NH 3 ·H 2 O:H 2 0 2 :H 2 0=1:1:4 cleaning solution, ultrasonic cleaning at a temperature of 90°C for 30 minutes; then use a volume ratio of HCL:H 2 o 2 :H 2 0=1:0.5:4 cleaning solution, ultrasonic cleaning at 90°C for 30 minutes to remove organic and metal attachments on the surface of the silicon wafer; finally placed in absolute ethanol, ultrasonic cleaning for 30 minutes to remove the substrate surface attached moisture.

[0025] (2) Depositing magnetic thin films by magnetron sputtering: place a SmCo permanent magnet with a surface magnetic field strength of 0.5 T on the back of the cleaned single crystal silicon substrate, when the vacuum in the magnetron sputtering chamber is 3×10 -5 Pa, when the argon pressure is 0.7Pa, the Co 0.84 Fe 0.01 PtC 0.15 For thin film deposition, the single cryst...

Embodiment 2

[0031] (1) Clean the single crystal silicon wafer: use hydrofluoric acid with a concentration of 20% to remove the oxide layer on the surface, and then use a volume ratio of NH 3 ·H 2 O:H 2 0 2 :H 2 0=1:3:5.5 cleaning solution, ultrasonic cleaning at a temperature of 70°C for 50 minutes; then use a volume ratio of HCL:H 2 o 2 :H 20=1:2:7 cleaning solution, ultrasonic cleaning at 70°C for 50 minutes to remove organic and metal attachments on the surface of the silicon wafer; finally placed in absolute ethanol, ultrasonic cleaning for 50 minutes to remove the substrate surface attached moisture.

[0032] (2) Deposit magnetic thin films by magnetron sputtering: place a NdFeB permanent magnet with a surface magnetic field strength of 1T on the back of the cleaned single crystal silicon substrate, when the vacuum in the magnetron sputtering chamber is 8×10 -5 Pa, when the argon pressure is 0.9Pa, the Co 0.19 Fe 0.01 PtC 0.15 film deposition, and control the rotation speed...

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Abstract

The invention discloses to a super high-density perpendicular magnetic recording magnetic film and a preparation method thereof, and relates to the technical fields of magnetic recording, information storage, information record regeneration and the like. The preparation method comprises the following steps of: placing a permanent magnet on the back side of a cleaned monocrystalline silicon piece; performing CoFePt magnetron sputtering when the vacuum degree of a back part in a magnetron sputtering chamber is between 3*(10<-5> and 8*10<-5>Pa and the pressure of argon is between 0.7 and 0.9Pa; forming a Co(1-x-y)FexPtCy deposition film on the front surface of the monocrystalline silicon piece; and placing the monocrystalline silicon piece in a vacuum annealing furnace and performing heat treatment to form the film with the thickness of between 300 and 800 nanometers. In the method, dopant atoms Fe and interstitial atoms C are added, so that the magnetocrystalline anisotropy of the film in the vertical direction are effectively improved and controlled, and the film has the characteristics of high vertical orientation degree, large coercive force, good chemical stability and the like.

Description

technical field [0001] The invention relates to the technical fields of magnetic recording, information storage and reproduction information recording, etc., in particular to the technical field of a superlattice structure magnetic recording metal thin film with strong vertical orientation. Background technique [0002] With the advancement of science and technology, hard disk technology has developed rapidly in the past ten years, and the storage density is changing with each passing day. In 2004, the laboratory magnetic recording density has reached 23Gb / cm 2 . The increase in magnetic recording density year by year has accelerated the increase in the capacity of high-density hard disks. In particular, the application of GMR spin valve magnetic heads has greatly increased the areal recording density. With the improvement of magnetic head and drive technology, in high-density magnetic recording, improving the recording performance of magnetic recording materials has becom...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B5/667G11B5/855
Inventor 张朋越周连明泮敏翔
Owner NANTONG WANBAO IND