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Method for manufacturing magnetic recording magnetic film

A magnetic thin film and perpendicular magnetic recording technology, which is applied in the fields of information storage and reproduction information recording, superlattice structure magnetic recording metal thin film, and magnetic recording, can solve the problem of strict control of deposition conditions and equipment requirements, unfavorable operation by ordinary technicians, and unfavorable Problems such as mass production, to achieve the effect of easy operation, good chemical stability and easy operation in the production process

Inactive Publication Date: 2012-12-05
南通保来利轴承有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the production cost of these preparation methods is high, the deposition condition control and equipment requirements are strict, and the orientation strength in the vertical direction is not high, which is not conducive to the operation of ordinary technicians in industrial production, so it is not conducive to mass production.

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  • Method for manufacturing magnetic recording magnetic film

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Experimental program
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Effect test

Embodiment 1

[0025] (1) Clean the single crystal silicon wafer: use hydrofluoric acid with a concentration of 5% to remove the oxide layer on the surface, and then use a volume ratio of NH 3 ·H 2 O:H 2 0 2 :H 2 0=1:1:4 cleaning solution, ultrasonically clean for 30 minutes at a temperature of 90 °C; then use a volume ratio of HCL:H 2 O 2 :H 2 0=1:0.5:4 cleaning solution, ultrasonically cleaned for 30min at a temperature of 90℃ to remove organic and metal attachments on the surface of the silicon wafer; finally placed in absolute ethanol, ultrasonically cleaned for 30min, and the surface of the substrate was removed attached moisture.

[0026] (2) Deposition of magnetic thin films by magnetron sputtering: place a SmCo permanent magnet with a surface magnetic field strength of 0.5T on the back of the cleaned single-crystal silicon substrate, and when the back vacuum in the magnetron sputtering chamber is 3×10 -5 Pa, when the argon gas pressure is 0.7Pa, the Co 0.84 Fe 0.01 PtC 0.15...

Embodiment 2

[0032] (1) Clean the single crystal silicon wafer: use hydrofluoric acid with a concentration of 20% to remove the oxide layer on the surface, and then use a volume ratio of NH 3 ·H 2 O:H 2 0 2 :H 20=1:3:5.5 cleaning solution, ultrasonically clean for 50 minutes at a temperature of 70 °C; then use a volume ratio of HCL:H 2 O 2 :H 2 0=1:2:7 cleaning solution, ultrasonically cleaned for 50min at a temperature of 70℃ to remove organic and metal attachments on the surface of the silicon wafer; finally placed in anhydrous ethanol, ultrasonically cleaned for 50min, and the surface of the substrate was removed attached moisture.

[0033] (2) Deposition of magnetic films by magnetron sputtering: place a NdFeB permanent magnet with a surface magnetic field strength of 1T on the back of the cleaned single-crystal silicon substrate, and when the vacuum in the magnetron sputtering chamber is 8×10 -5 Pa, when the argon gas pressure is 0.9Pa, the Co 0.19 Fe 0.01 PtC 0.15 depositio...

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Abstract

The invention discloses a method for manufacturing an ultra-high density vertical magnetic recording magnetic film and relates to the technical field of magnetic recording, information storage and reproduced information record. The method comprises the following steps of: arranging a permanent magnet on the back of a cleaned monocrystalline silicon chip, starting CoFePtC magnetic sputtering when the backing vacuum degree in a magnetic sputtering chamber is 3*10<-5> to 8*10<-5>Pa and the argon pressure is 0.7 to 0.9Pa, and forming a Co1-x-yFexPtCy deposition film on the front side of the monocrystalline silicon chip; and performing heat treatment on the monocrystalline silicon chip in a vacuum annealing furnace, and forming a film with the thickness of 300 to 800nm. A doping atom Fe and an interstitial atom C are added, and the magnetocrystalline anisotropy of the film in the perpendicular direction is effectively improved and controlled, so that the film has the characteristics of high perpendicular orientation degree, high coercive force, high chemical stability and the like.

Description

[0001] This application is a divisional application of the invention patent application with the application number of 201110052933.1 filed on March 7, 2011. technical field [0002] The invention relates to the technical fields of magnetic recording, information storage and reproduction of information recording, etc., in particular to the technical field of a superlattice structure magnetic recording metal film with strong vertical orientation. Background technique [0003] With the advancement of science and technology, hard disk technology has developed rapidly in the past ten years, and the storage density is changing with each passing day. In 2004, the laboratory magnetic recording density has reached 23Gb / cm 2 . The increase in magnetic recording density year by year has accelerated the increase in the capacity of high-density hard disks. In particular, the application of GMR spin valve magnetic heads has greatly improved the areal recording density. With the improve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B5/84G11B5/851
Inventor 张朋越周连明泮敏翔
Owner 南通保来利轴承有限公司