Preparation method and application of vertical lamellar orientation structure material
A technology of structural materials and vertical sheets, which is applied in the field of preparation of vertical sheet alignment structure materials, can solve the problems of time-consuming, low thickness of vertical alignment structures, and complicated operation steps.
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[0044] The embodiment of the present application provides a method for preparing a vertical lamellar alignment structure material, which includes the following steps:
[0045] S11. Prepare a microfluidic chip containing a micropipe array;
[0046] S12, preparing a dispersion liquid containing nanosheet materials;
[0047] S13. Inject the dispersion liquid containing the nanosheet material onto the microfluidic chip, then flow into the coagulation liquid, and freeze-dry to obtain the vertical sheet orientation structure material;
[0048] Wherein, the microchannel depth of the microchannel array is 50-150 μm, and the width of the microchannel is 30 μm.
[0049] It should be noted that in the preparation method of the vertical sheet orientation structure material of the present application, the micropipe array on the microfluidic chip is used as a template, and since the micropipe array has a high aspect ratio, it can finely control the orientation of the nanosheet material , ...
Embodiment 1
[0081] The embodiment of the present application provides a method for preparing a vertical lamellar alignment structure material, which includes the following steps:
[0082] S11. Clean the 4-inch silicon wafer, spin-coat 4ml SU8-2150 negative photoresist on the silicon wafer at a speed of 3000rpm / s for 30s, remove the photoresist on the edge of the wafer, and leave it for at least 30min; then apply The photoresist-coated silicon wafer was baked on a heating plate at 65°C for 5 minutes, then heated to 95°C at a rate of 5°C / min and baked for 30 minutes, then cooled to room temperature at a rate of 1°C / min, and then contact-type The near-ultraviolet lithography machine exposes the silicon wafer, puts the mask plate, and the exposure dose is 260mJ / cm 2 Immediately after exposure, bake on a heating plate at 55°C for 45 minutes, develop with a developer for 15 minutes, clean with isopropanol, blow dry with nitrogen, and bake on a heating plate at 200°C for 15 minutes to obtain a p...
Embodiment 2
[0091] The embodiment of the present application provides a method for preparing a vertical lamellar alignment structure material, which includes the following steps:
[0092] S11. Clean the 4-inch silicon wafer, spin-coat 4ml SU8-3025 negative photoresist on the silicon wafer at a speed of 4300rpm / s for 30s, remove the photoresist on the edge of the wafer, and leave it for at least 30min; then apply The photoresist-coated silicon wafer was baked on a heating plate at 95°C for 15 minutes, and then cooled to room temperature at a rate of 1°C / min. Then, the silicon wafer was exposed using a contact near-ultraviolet lithography machine, and a mask was placed on it. , the exposure dose is 230mJ / cm 2 Immediately after exposure, bake on a heating plate at 55°C for 10 minutes, then develop with a developer for 6 minutes, clean with isopropanol, and dry with nitrogen, then bake on a heating plate at 200°C for 15 minutes to obtain a pipe with a depth of 30 μm , a photoresist mold of a...
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Abstract
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