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Wafer heating apparatus, electrostatic chuck, and method for manufacturing wafer heating apparatus

A heating device and wafer technology, which is applied in the manufacture of semiconductor/solid-state devices, circuits, electrical components, etc., can solve the problems of not being able to achieve heat uniformity, the amount of filler added is limited, and improved, and achieves uniform heat distribution and reduction of heat. Small deviation, uniform heat diffusion effect

Active Publication Date: 2011-10-12
KYOCERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In the semiconductor support device described in Patent Document 1, the thermal conductivity of the bonding layer is improved by using a bonding layer composed of an adhesive sheet to which a filler is added as the bonding layer. However, the amount of the filler added is limited. Further improvement of heat uniformity cannot be sought

Method used

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  • Wafer heating apparatus, electrostatic chuck, and method for manufacturing wafer heating apparatus
  • Wafer heating apparatus, electrostatic chuck, and method for manufacturing wafer heating apparatus
  • Wafer heating apparatus, electrostatic chuck, and method for manufacturing wafer heating apparatus

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Embodiment

[0070] Embodiments of the wafer heating apparatus of the present invention will be described below.

[0071] Made as follows figure 1 , figure 2 A wafer heating device 1 of the structure shown.

[0072] First, as the base member 3, a circle made of an aluminum alloy composed of an Al-Mg-Si alloy (aluminum alloy standard number 6061 (JIS H 4000, etc.)) and in which a cooling passage through which a cooling medium such as water can flow is formed. Plate-shaped base member. The size of the base member 3 is 300 mm in diameter and 35 mm in thickness. In addition, the base member 3 is provided with a terminal hole for supplying electricity to the heating electrode 17 after bonding the insulating layer 5 in which the heating electrode 17 is embedded.

[0073] Next, the heating electrode 17 is made of inconel (trade name (Ni-Cr-Fe alloy)), and is formed into a predetermined pattern by etching or the like. The disc-shaped insulating layer 5 in which the heater electrode 17 is bur...

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Abstract

Provided is a wafer heating apparatus which can reduce nonuniformity of heat applied to a semiconductor wafer or the like, by improving uniformity of heat. A wafer heating apparatus (1) is provided with: a base member (3) having a flat upper surface; an insulating layer (5) having a heater electrode embedded therein; a uniformly heating plate (13) having, on the wafer side, the upper surface adhered to the upper surface of the insulating layer (5); and an adhesive layer (7), which has the lower surface of the insulating layer (5) adhered to the upper surface of the base member (3), and is composed of a resin containing a filler. The adhesive layer (7) has at least two layers, i.e., a first adhesive layer (9) on the base member (3) side, and a second adhesive layer (11) in contact with theinsulating layer (5). The pieces of the filler contained in the second adhesive layer (11) have flat shapes, respectively, and the flat filler pieces are flatly arranged in the surface direction of the second adhesive layer (11).

Description

technical field [0001] The present invention relates to a wafer heating device used in film forming devices and etching devices used in, for example, CVD, PVD, and sputtering methods, an electrostatic chuck using the wafer heating device, and a method for manufacturing the wafer heating device. Background technique [0002] Conventionally, a wafer heating device that supports and heats a semiconductor wafer or a glass wafer is used, for example, as a film forming device and an etching device used in a CVD method, a PVD method, and a sputtering method. [0003] When heating a semiconductor wafer or the like using such a wafer heating apparatus, it is required to reduce variation in heat applied to the semiconductor wafer or the like. Therefore, it is required to improve the heat uniformity of the bonding material for bonding the base (base member) and the insulator constituting the wafer heating device. [0004] Then, Patent Document 1 describes a semiconductor supporting de...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683C23C14/50C23C16/46H01L21/3065H01L21/205
CPCC23C14/50C23C16/4586H01L21/67103H01L21/6831Y10T156/10C23C16/46H01L21/3065H01L21/683
Inventor 右田靖
Owner KYOCERA CORP
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