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Wafer heating apparatus, electrostatic chuck, and method for manufacturing wafer heating apparatus

A technology for heating devices and wafers, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of inability to seek heat uniformity, increase, and limit the amount of fillers added, and achieve uniform heat distribution and reduce heat loss. Small deviation, uniform heat diffusion effect

Active Publication Date: 2013-05-08
KYOCERA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In the semiconductor support device described in Patent Document 1, the thermal conductivity of the bonding layer is improved by using a bonding layer composed of an adhesive sheet to which a filler is added as the bonding layer. However, the amount of the filler added is limited. Further improvement of heat uniformity cannot be sought

Method used

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  • Wafer heating apparatus, electrostatic chuck, and method for manufacturing wafer heating apparatus
  • Wafer heating apparatus, electrostatic chuck, and method for manufacturing wafer heating apparatus
  • Wafer heating apparatus, electrostatic chuck, and method for manufacturing wafer heating apparatus

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Embodiment

[0070] An embodiment of the wafer heating device of the present invention will be described below.

[0071] Make as follows figure 1 , figure 2 The wafer heating device 1 of the structure shown.

[0072] First, as the base member 3, a circle made of aluminum alloy made of Al-Mg-Si alloy (aluminum alloy standard number 6061 (JIS H 4000 etc.)) with a cooling path through which a cooling medium such as water can flow is formed inside. Plate-shaped base member. The size of the base member 3 is 300 mm in diameter and 35 mm in thickness. In addition, the base member 3 is provided with a terminal hole for energizing the heater electrode 17 after bonding the insulating layer 5 in which the heater electrode 17 is buried.

[0073] Next, the heating electrode 17 is made of inconel (trade name (Ni-Cr-Fe alloy)), and is formed into a predetermined pattern by etching or the like. The heating electrode 17 is sandwiched by an adhesive polyimide film, and the heating electrode 17 is pressed and i...

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Abstract

The present invention provides a wafer heating device capable of reducing variation in heat applied to a semiconductor wafer or the like by improving heat uniformity. The wafer heating device (1) comprises: a base member (3) whose upper surface is a plane; an insulating layer (5) in which a heating electrode is buried; a board (13); and an adhesive layer (7) made of resin containing a filler and bonding the lower surface of the insulating layer (5) to the upper surface of the base member (3), wherein the adhesive layer (7) is at least It has two layers, the first adhesive layer (9) on the side of the base member (3) and the second adhesive layer (11) in contact with the insulating layer (5), and the filler contained in the second adhesive layer (11) is Flat shape, the flat fillers are arranged flat along the surface direction of the second adhesive layer (11).

Description

Technical field [0001] The present invention relates to a wafer heating device used in a film forming device and an etching device used in, for example, a CVD method, a PVD method, and a sputtering method, an electrostatic chuck using the wafer heating device, and a method of manufacturing a wafer heating device. Background technique [0002] Conventionally, in film forming apparatuses and etching apparatuses used in the CVD method, PVD method, and sputtering method, for example, a wafer heating device that supports and heats a semiconductor wafer or a glass wafer is used. [0003] When using such a wafer heating device to heat a semiconductor wafer or the like, it is required to reduce the deviation of heat applied to the semiconductor wafer or the like. Therefore, it is required to improve the heat uniformity of the bonding material for bonding the base (base member) and the insulator constituting the wafer heating device. [0004] Therefore, Patent Document 1 describes a semicond...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683C23C14/50C23C16/46H01L21/3065H01L21/205
CPCC23C14/50C23C16/4586H01L21/67103H01L21/6831Y10T156/10C23C16/46H01L21/3065H01L21/683
Inventor 右田靖
Owner KYOCERA CORP
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