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Organic-light emitting device and method of manufacturing the same

A technology of organic light-emitting devices and organic layers, which is applied in the manufacture/processing of organic light-emitting devices, organic light-emitting devices, semiconductor/solid-state device manufacturing, etc., and can solve the problems of reducing energy consumption, wasting power consumption and lifespan of organic semiconductor materials, etc.

Active Publication Date: 2015-05-06
SAMSUNG DISPLAY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, as the demand for large-area and high-brightness organic light-emitting devices increases, problems such as wasteful power consumption and reduced lifespan of organic semiconductor materials are caused.

Method used

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  • Organic-light emitting device and method of manufacturing the same
  • Organic-light emitting device and method of manufacturing the same
  • Organic-light emitting device and method of manufacturing the same

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Embodiment Construction

[0027] Embodiments will be described in detail below with reference to the drawings.

[0028] figure 1 is a cross-sectional view illustrating a stacked structure of an organic light emitting device according to an embodiment. refer to figure 1 , the oxide semiconductor layer 12 is formed on the anode 11 . A hole injection layer (HIL) 13, a hole transport layer (HTL) 14, an emission layer (EML) 15, an electron transport layer (ETL) 16, and an electron injection layer (EIL) 17 are sequentially formed on the oxide semiconductor on layer 12. Cathode 18 is formed on EIL 17 .

[0029] The anode 11 may include a material of indium oxide (InO), zinc oxide (ZnO), tin oxide (SnO), indium tin oxide (ITO), or indium zinc oxide (IZO), a composite thereof. The anode 11 may further include gold (Au), platinum (Pt), silver (Ag), copper (Cu), or the like.

[0030] The oxide semiconductor layer 12 may be an oxide including indium (In), zinc (Zn), and gallium (Ga), or an oxide including in...

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Abstract

An organic light-emitting device including: an anode; a hole charging layer (HCL) comprising an oxide semiconductor and formed on the anode; at least one organic layer formed on the HCL; and a cathode formed on the organic layer. The HCL may be an oxide semiconductor including indium (In), gallium (Ga), and zinc (Zn), or an oxide semiconductor including In, Zn, and hafnium (Hf).

Description

[0001] Cross References to Related Applications [0002] This application claims priority and benefit from Korean Patent Application No. 10-2010-0033896 filed with the Korean Intellectual Property Office on Apr. 13, 2010, the disclosure of which is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to an organic light emitting device, and more particularly, to an organic light emitting device having a pixel portion made in a stacked structure and including an oxide semiconductor, and a method of manufacturing the organic light emitting device. Background technique [0004] An organic light emitting device includes a material that emits light when a voltage is applied thereto. Compared with liquid crystal displays (LCDs), organic light emitting devices have advantages such as high brightness, wide viewing angle, and high response speed. Organic light-emitting devices also do not require a backlight, so they can be made ve...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56H10N10/856
CPCH10K50/17H10K59/80517H10K50/816
Inventor 金武谦朴昶模
Owner SAMSUNG DISPLAY CO LTD