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Closed cooling system of gas cooled polysilicon ingot furnace

A polycrystalline silicon ingot furnace and cooling system technology, applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve problems such as failure to make breakthroughs in technological improvement, and achieve stability, convenient operation, and accurate temperature control. Effect

Active Publication Date: 2011-11-09
ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL +1
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Problems solved by technology

Although it has been nearly 10 years since the advent of polysilicon ingot furnaces, the above-mentioned control technology of moving heat insulation cages for radiation cooling is generally used, and no breakthrough has been made in its technical improvement.

Method used

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  • Closed cooling system of gas cooled polysilicon ingot furnace
  • Closed cooling system of gas cooled polysilicon ingot furnace
  • Closed cooling system of gas cooled polysilicon ingot furnace

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Embodiment Construction

[0067] The present invention will be further described below in conjunction with accompanying drawing.

[0068] The improved structure heat exchange table for polysilicon ingot furnace is used to place the crucible of polysilicon ingot furnace and realize heat exchange, usually made of graphite. The heat exchange platform is provided with a gas inlet and a gas outlet, and a cooling air channel is arranged inside the heat exchange platform, and is connected with the aforementioned gas inlet and gas outlet.

[0069] Usually, based on the processing method, graphite material cannot be processed into internal channels with changing shapes without cutting. Therefore, the commonly used method is to divide it into a layered structure, slot the two layers according to the designed channel shape, and then put the two layered structures together to obtain heat exchange table products with various shapes and structures.

[0070] As a special case, the heat exchange platform does not rea...

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Abstract

The invention relates to the manufacture technical field of polysilicon ingot furnaces, and aims to provide a closed cooling system of a gas cooled polysilicon ingot furnace. The system comprises a heat exchange platform positioned on a supporting column and used for placing a crucible, wherein a cooling gas channel is arranged in the heat exchange platform; a gas inlet and a gas outlet at two ends of the cooling gas channel are respectively connected with a cooling gas inlet pipeline and a cooling gas outlet pipeline; and the heat exchange platform, the cooling gas inlet pipeline, the cooling gas outlet pipeline, a cooling gas power pump group and a cooler form a closed circulation loop of the cooling gas. Compared with the cooling method of radiation cooling and water cooling, the system related by the invention has strong gas cooling control capacity and high industrial controllability; the gas is fed into the heat exchange platform evenly, so that the whole temperature of the heatexchange platform is even, which is in favor of even nucleation of a silicon melt at the bottom of the crucible; and the reducing speed of the temperature at the bottom of the crucible can be precisely controlled during the crystal growth.

Description

technical field [0001] The invention relates to the technical field of manufacturing polysilicon ingot furnaces, in particular to a closed cooling system of a gas-cooled polysilicon ingot furnace, which is suitable for manufacturing large-grain and high-quality polysilicon ingots. Background technique [0002] Polysilicon ingot casting furnace is the main production equipment of polysilicon in the photovoltaic industry at present. Its function is to turn polysilicon into a polysilicon ingot with a certain crystal growth direction after several stages of melting, directional crystallization, annealing and cooling according to the set process. The environment required for the polycrystalline silicon ingot casting process is the thermal field of the polycrystalline ingot casting furnace. By rationally designing the power distribution of the heater in the thermal field, the position and thickness distribution of the heat insulating material, the crystal growth direction of the f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 曹建伟石刚傅林坚叶欣邱敏秀
Owner ZHEJIANG JINGSHENG MECHANICAL & ELECTRICAL
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