Electrode structure and manufacturing method thereof as well as array substrate and manufacturing method thereof

Abstract

The invention discloses an electrode structure and a manufacturing method thereof as well as an array substrate and a manufacturing method thereof. The electrode structure comprises a first aluminum layer, a second aluminum layer and a metal layer, wherein the first aluminum layer is manufactured by using a radio-frequency magnetron sputtering method; the second aluminum layer is manufactured by using a DC (direct current) magnetron sputtering method; the metal layer is manufactured by using the DC magnetron sputtering method and is arranged above the first aluminum layer and the second aluminum layer; and the crystalline grains in the first aluminum layer are smaller than those in the second aluminum layer. In the invention, the first aluminum layer can release the compressive stresses more quickly, thus avoiding generating hillocks; the second aluminum layer has lower resistivity so that the requirement of electrode signal delay can be met; and meanwhile, the metal layer can inhibithillocks growing on the surfaces of the aluminum layers. According to the invention, additional etching and anodic oxidation processes are not required and process cost is saved.

Description

technical field [0001] The invention relates to liquid crystal display technology, in particular to an electrode structure and a preparation method, an array substrate and a preparation method. Background technique [0002] At present, flat panel display technology is the mainstream technology adopted by liquid crystal display, among which thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display, referred to as: TFT-LCD) has the advantages of small size, low power consumption, small radiation and high resolution. Become the most important flat panel display device at present. The TFT-LCD panel includes an array substrate and a color filter film substrate, liquid crystal sealed between the two substrates, and a printed circuit board (Printed Circuit Board, PCB for short) that plays a driving role. Wherein the array substrate includes a base substrate and a conductive pattern and an insulating layer formed on the base substrate, the conductive ...

AI Technical Summary

Problems solved by technology

Among them, the first method is to use Al alloy targets doped with rare earth metals or transition metals, such as aluminum tantalum alloy (AlTa), aluminum neodymium alloy (AlNd), aluminum indium alloy (AlIn), etc. The pinning effect of the grid avoids the formation of hillocks; but the disadvantage of this method is that the resistivity of the film increases after adding other elements, and it also increases the cost.

The second method is to use an etching process to form a covering layer on the upper layer of the pure Al film layer, and form a buffer layer on the lower layer; this method cannot completely eliminate the hillocks, and the process cost is increased due to the addition of etching steps

The third method is to use anodic oxidation to form an oxide layer on the surface of the Al film; this method requires an additional anodic oxidation step, which increases the process cost

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